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US 10,249,665 B2Granted
Solid-state imaging device and method of manufacturing solid-state imaging device
AssigneeSony Corporation
InventorsYuichi Yamamoto, Hayato Iwamoto
Life of this patent
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Abstract
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
Claims21
A solid-state image pickup device comprising:
- an insulating layer between a first semiconductor substrate and a second semiconductor substrate, the second semiconductor substrate is between an electrode layer and the insulating layer;
- an adhesive layer between the insulating layer and the first semiconductor substrate;
- an electrically-insulative planarized layer between an on-chip lens and a light-receiving sensor portion of the second semiconductor substrate, the second semiconductor substrate is between the insulating layer and the planarized layer;
- an electrically-insulative alignment mark between the planarized layer and the insulating layer, the insulating layer and the planarized layer touch the alignment mark;
- and
- a metal layer between the electrode layer and the insulating layer, the insulating layer and the electrode layer touch the metal layer.
3 more elements
Dependencies are inferred from the claim text.