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US 10,247,630 B2Granted
Semiconductor device, mechanical quantity measuring device, and semiconductor device fabricating method
AssigneeHitachi Automotive Systems, Ltd.
InventorsHanae Shimokawa, Shosaku Ishihara, Atsuo Soma, Junji Onozuka, Hiroshi Onuki, Daisuke Terada, Mizuki Shibata
Life of this patent
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Abstract
A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.
Claims18
A semiconductor device comprising:
- a metal body;
- a bonding layer placed on the metal body;
- and
- a semiconductor chip placed on the bonding layer,
- wherein the bonding layer includes:
- a first layer that contains a filler and is formed between the metal body and the semiconductor chip, and
- a second layer bonded to the first layer and the semiconductor chip, wherein the second layer has a thermal expansion coefficient higher than that of the first layer and a thickness of the second layer is half as large as that of the first layer or less.
4 more elements
A semiconductor device comprising:
- a metal body;
- a bonding layer placed on the metal body;
- and
- a semiconductor chip placed on the bonding layer,
- wherein the bonding layer includes:
- a first layer that contains a filler and is formed between the metal body and the semiconductor chip, wherein a main component of the first layer is a material whose specific weight is larger than that of the filler, and
- a second layer bonded to the first layer and the semiconductor chip, wherein the second layer has a thermal expansion coefficient higher than that of the first layer.
4 more elements
A semiconductor device comprising:
- a metal body;
- a bonding layer placed on the metal body;
- and
- a semiconductor chip placed on the bonding layer,
- wherein the bonding layer includes:
- a first layer that contains a filler and is formed between the metal body and the semiconductor chip, wherein surface irregularities are formed on an interface side of the first layer due to protrusion of the filler therefrom, and
- a second layer bonded to the interface side of the first layer and the semiconductor chip, wherein the second layer has a thermal expansion coefficient higher than that of the first layer, and the second layer covers the surface irregularities on the first layer.
4 more elements
Dependencies are inferred from the claim text.