# US 10,246,797 B2 · Method for manufacturing silicon carbide single crystal

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- Number: US 10,246,797 B2
- Document ID: US10246797B2
- Status: Granted
- Kind: B2
- Application number: 15/535,848
- Filed: 2016-01-05
- Published: 2017-11-23
- Granted: 2019-04-02
- Earliest claimed: 2015-02-13
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Sumitomo Electric Industries, Ltd.
- Inventors: Sho Sasaki; Shin Harada; Tsutomu Hori
- Web page: https://patentgrep.com/patent/US10246797B2

## CPC

- C30B 29/36: Carbides
- C30B 23/02: Epitaxial-layer growth
- C30B 23/066: {Heating of the material to be evaporated}
- C30B 29/06: Silicon
- C30B 33/02: Heat treatment (C30B33/04, C30B33/06 take precedence)
- C30B 35/002: {Crucibles or containers}
- C30B 35/007: {Apparatus for preparing, pre-treating the source material to be used for crystal growth}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

## Claims

### Claim 1

A method for manufacturing a silicon carbide single crystal, the method comprising:
packing a silicon carbide source material into a crucible, the silicon carbide source material having a Carr's flowability index of not less than 70 and not more than 100; and
sublimating the silicon carbide source material by heating the silicon carbide source material.

### Claim 2 (depends on 1)

The method for manufacturing the silicon carbide single crystal according to claim 1, wherein the flowability index of the silicon carbide source material is not less than 80 and not more than 100.

### Claim 3 (depends on 1)

The method for manufacturing the silicon carbide single crystal according to claim 1, wherein the flowability index of the silicon carbide source material is not less than 90 and not more than 100.

### Claim 4

A method for manufacturing a silicon carbide single crystal, the method comprising:
packing a silicon carbide source material into a crucible, the silicon carbide source material having a Carr's flowability index of not less than 90 and not more than 100; and
sublimating the silicon carbide source material by heating the silicon carbide source material.