# US 10,246,796 B2 · RAMO4 substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,246,796 B2 - Document ID: US10246796B2 - Status: Granted - Kind: B2 - Application number: 15/429,164 - Filed: 2017-02-10 - Published: 2017-09-28 - Granted: 2019-04-02 - Earliest claimed: 2016-03-25 - Assignees: Panasonic Intellectual Property Management Co., Ltd. - Applicants: Panasonic Intellectual Property Management Co., Ltd. - Inventors: Isao Tashiro; Hidenao Kataoka; Yoshio Okayama; Nobuyuki Yokoyama; Yoshifumi Takasu - Web page: https://patentgrep.com/patent/US10246796B2 ## CPC - C30B 29/22: Complex oxides - C01F 17/34: Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12 - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00}) ## Abstract A RAMO4 substrate containing an RAMO4 base material part containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), the RAMO4 base material part having a beveled portion at an edge portion thereof. ## Claims ### Claim 1 A RAMO4 substrate comprising a RAMO4 base material part containing a single crystal represented by the general formula RAMO4, where R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd, wherein: the RAMO4 base material part has a beveled portion at an edge portion of the RAMO4 base material part, the RAMO4 base material part has a principal surface having an off angle θ with respect to a cleavage surface of the single crystal, the beveled portion contains a first region having an angle θ1 with respect to the principal surface, and a second region formed outside the first region, having an angle θ2 with respect to the principal surface, and the angles θ, θ1, and θ2 satisfy the relationship θ1<θ<θ2. ### Claim 2 (depends on 1) The RAMO4 substrate according to claim 1, wherein the off angle θ satisfies 0.09 deg≤θ≤45 deg, and the angles θ and θ2 satisfy θ2<θ+45 deg. ### Claim 3 (depends on 1) The RAMO4 substrate according to claim 1, wherein assuming that w1 shows a length of the first region in a direction in parallel to the principal surface, and w2 shows a length of the second region in a direction in parallel to the principal surface, w1 is at least 0.1 mm and no greater than 5 mm, and w2 is at least 0.1 mm and no greater than 5 mm. ### Claim 4 (depends on 1) The RAMO4 substrate according to claim 1, wherein the principal surface does not have irregularities of 500 nm or more. ### Claim 5 (depends on 1) The RAMO4 substrate according to claim 1, wherein the single crystal contains ScAlMgO4.