# US 10,246,794 B2 · Diamond substrate and method for manufacturing diamond substrate

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- Number: US 10,246,794 B2
- Document ID: US10246794B2
- Status: Granted
- Kind: B2
- Application number: 15/115,387
- Filed: 2015-02-02
- Published: 2017-01-12
- Granted: 2019-04-02
- Earliest claimed: 2014-02-05
- Assignees: Adamant Namiki Precision Jewel Co., Ltd.
- Applicants: Namiki Seimitsu Houseki Kabushikikaisha
- Inventors: Hideo Aida; Koji Koyama; Kenjiro Ikejiri; Seongwoo Kim
- Web page: https://patentgrep.com/patent/US10246794B2

## CPC

- C30B 25/183: {being provided with a buffer layer, e.g. a lattice matching layer}
- C23C 16/274: {using microwave discharges}
- C23C 16/279: {control of diamond crystallography}
- C30B 23/025: {characterised by the substrate}
- C30B 25/02: Epitaxial-layer growth
- C30B 25/105: {by irradiation or electric discharge}
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- C30B 29/04: Diamond
- C30B 29/605: {Products containing multiple oriented crystallites, e.g. columnar crystallites}
- H10D 62/405: {Orientations of crystalline planes}
- H10D 62/57: the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
- H10D 62/8303: {Diamond}
- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- H10P 14/3466: {Crystal orientation}
- H10P 95/11: {Separation of active layers from substrates}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km−1 and equal to or lower than 1500 km−1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

## Claims

### Claim 1

A method of manufacturing a diamond substrate, comprising:
preparing a base substrate;
forming a diamond layer formed from diamond single crystals on one side of the base substrate;
removing a part of the diamond layer to leave a plurality of pillar-shaped diamonds from the diamond layer, the plurality of pillar-shaped diamonds being spaced apart to each other;
causing the diamond single crystals to grow from tips of each pillar-shaped diamond while a space between the plurality of pillar-shaped diamonds are not fully filled and coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamonds to form a diamond substrate layer;
separating the diamond substrate layer from the base substrate; and
manufacturing the diamond substrate from the diamond substrate layer,
wherein a curvature of a crystal plane in an interior of the diamond substrate is set to higher than 0 km−1 and equal to or lower than 1500 km−1.

### Claim 2 (depends on 1)

The method according to claim 1, wherein separation of the base substrate and the diamond substrate layer is performed by generating a stress in the pillar-shaped diamonds and destroying the pillar-shaped diamonds.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the stress is generated by a lattice constant difference between the base substrate and the diamond substrate layer and/or a thermal expansion coefficient difference between the base substrate and the diamond substrate layer.

### Claim 4 (depends on 1)

The method according to claim 1, wherein an aspect ratio of each of the pillar-shaped diamond is equal to or higher than 5.

### Claim 5 (depends on 1)

The method according to claim 1, wherein a diameter and a pitch of the pillar-shaped diamond are set to be equal to or smaller than 10 respectively.

### Claim 6 (depends on 1)

The method according to claim 1, wherein a surface roughness Ra of the one side of the base substrate is equal to or lower than 10 nm.

### Claim 7 (depends on 1)

The method according to claim 1, wherein a height direction of the pillar-shaped diamond is set to be perpendicular to the plane (001) of the diamond single crystals used to form the pillar-shaped diamonds.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the pillar-shaped diamond has a cylindrical shape, and
a diameter of a center portion of the pillar-shaped diamond in the height direction is thinner than a diameter of a tip portion.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the curvature is set to be higher than 0 km−1 and equal to or lower than 400 km−1.

### Claim 10 (depends on 1)

The method according to claim 1, wherein the curvature is set to be higher than 0 km−1 and equal to or lower than 200 km−1.

### Claim 11 (depends on 1)

The method according to claim 1, wherein a shape of the diamond substrate in an in-plane is a circular shape or a circular shape having an orientation flat plane, and
a diameter of the diamond substrate is equal to or larger than 0.4 inches.

### Claim 12 (depends on 11)

The method according to claim 11, wherein the diameter is equal to or larger than 2 inches.

### Claim 13 (depends on 11)

The method according to claim 11, wherein the diameter is equal to or larger than 2 inches and equal to or smaller than 8 inches.