# US 10,246,783 B2 · Copper etchant solution additives and method for producing copper etchant solution > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,246,783 B2 - Document ID: US10246783B2 - Status: Granted - Kind: B2 - Application number: 15/123,645 - Filed: 2016-07-11 - Published: 2018-06-21 - Granted: 2019-04-02 - Earliest claimed: 2016-07-11 - Assignees: Shenzhen China Star Optoelectronics Technology Co., Ltd. - Applicants: Shenzhen China Star Optoelectronics Technology Co., Ltd. - Inventors: Yue Wu; Yu-lien Chou; Zhichao Zhou - Web page: https://patentgrep.com/patent/US10246783B2 ## CPC - C23F 1/18: for etching copper or alloys thereof - C23F 1/14: Aqueous compositions - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ## Abstract The present disclosure discloses a copper etchant solution additives and a method for producing copper etchant solution. The method includes: producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality; before wet-etching, the copper etchant solution additives is added in the copper etchant solution, and the copper etchant solution is with a cupric ions (Cu2+) concentration of 700-1000 ppm. Through the above method, the present disclosure can improve etchant property of copper etchant solution to increase etching rate and uniformity. ## Claims ### Claim 1 A method for producing copper etchant solution, the production method comprising: producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality; adding the copper etchant solution additives in copper etchant solution to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 700-1000 ppm before wet-etching, wherein the cupric ions (Cu2+) in the copper etchant solution are all electrolytic without forming complexes or depositions. ### Claim 2 (depends on 1) The method of claim 1, wherein the step of producing the copper etchant solution additives comprises: dissolving 18 g of copper sulfate pentahydrate in 100 g of water to form the copper etchant solution additives. ### Claim 3 (depends on 2) The method of claim 2, wherein the step of that the copper etchant solution additives is added in copper etchant solution before wet-etching comprises: adding 12.8 g of copper etchant solution additives in every 500 mL copper etchant solution to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 1000 ppm. ### Claim 4 (depends on 1) The method of claim 1, wherein the step of producing copper etchant solution additives comprises: dissolving 10 g of copper sulfate pentahydrate and 10 g of copper nitrate in 100 g of water to form the copper etchant solution additives. ### Claim 5 (depends on 4) The method of claim 4, wherein the step of that the copper etchant solution additives is added in copper etchant solution before wet-etching comprises: adding 10 g of copper etchant solution additives in every 500 mL of copper etchant solution to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 1000 ppm. ### Claim 6 A copper etchant solution additives, wherein the copper etchant solution additives is an inorganic comprising cupric ions (Cu2+), deionized water is a solvent for the copper etchant solution additives and is electric neutrality, and the copper etchant solution additives is added in a copper etchant solution before wet-etching to obtain the copper etchant solution with a cupric ions (Cu2+) concentration of 700-1000 ppm, wherein the cupric ions (Cu2+) in the copper etchant solution are all electrolytic without forming complexes or depositions. ### Claim 7 (depends on 6) The copper etchant solution additives of claim 6, wherein the copper etchant solution additives is aqueous copper sulfate formed by dissolving 18 g of copper sulfate pentahydrate in 100 g of water. ### Claim 8 (depends on 7) The copper etchant solution additives of claim 7, wherein the copper etchant solution contains 12.8 g of copper etchant solution additives in every 500 mL of copper etchant solution, and is with a cupric ions (Cu2+) concentration of 1000 ppm. ### Claim 9 (depends on 6) The copper etchant solution additives of claim 6, wherein the copper etchant solution additives is an aqueous solution of both copper sulfate and copper nitrate, and is formed by dissolving 10 g of copper sulfate pentahydrate and 10 g of copper nitrate in 100 g of water. ### Claim 10 (depends on 9) The copper etchant solution additives of claim 9, wherein the copper etchant solution contains 10 g of copper etchant solution additives in every 500 mL of copper etchant solution, and is with a cupric ions (Cu2+) concentration of 1000 ppm.