# US 10,246,773 B2 · Method for forming amorphous thin film

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- Number: US 10,246,773 B2
- Document ID: US10246773B2
- Status: Granted
- Kind: B2
- Application number: 15/568,536
- Filed: 2016-05-09
- Published: 2018-04-26
- Granted: 2019-04-02
- Earliest claimed: 2015-05-08
- Assignees: Eugene Technology Co., Ltd.
- Applicants: Eugene Technology Co., Ltd.
- Inventors: Seung-Woo Shin; Cha-Young Yoo; Woo-Duck Jung; Ho-Min Choi; Wan-Suk Oh; Koon-Woo Lee; Hyuk-Lyong Gwon; Ki-Ho Kim
- Web page: https://patentgrep.com/patent/US10246773B2

## CPC

- C23C 16/38: Borides
- C23C 16/22: characterised by the deposition of inorganic material, other than metallic material
- C23C 16/24: Deposition of silicon only
- C23C 16/42: Silicides
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3444: {P-type}
- H10P 14/3454: {Amorphous}
- H10P 14/40: of conductive or resistive materials
- H10P 14/416: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
- B82Y 40/00: Manufacture or treatment of nanostructures
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

## Claims

### Claim 1

A method for forming an amorphous thin film, the method comprising:
forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; and
forming the amorphous thin film having a predetermined thickness on the seed layer,
wherein said forming the amorphous thin film comprises:
forming a first boron-doped amorphous thin film having a first thickness on the seed layer; and
forming a second boron-doped amorphous thin film having a second thickness on the first boron-doped amorphous thin film, and
wherein a first source gas used in said forming the first boron-doped amorphous thin film includes boron-based gas and silane-based gas and be supplied to the seed layer, and a second source gas used in said forming the second boron-doped amorphous thin film includes the boron-based gas, the second source gas being different from the first source gas and being supplied to the first boron-doped amorphous thin film.

### Claim 2 (depends on 1)

The method of claim 1, wherein the boron-based gas is B2H6.

### Claim 3 (depends on 2)

The method of claim 2, wherein the silane-based gas included in the first source gas is SiH4.

### Claim 4 (depends on 3)

The method of claim 3, wherein silane-based gas further included in the second source gas is Si2H6 and the second amorphous thin film is a silicon thin film,
the forming the first amorphous thin film is performed at 300° C., and
the forming the second amorphous thin film is performed at 400° C.

### Claim 5 (depends on 3)

The method of claim 3, wherein silane-based gas further included in the second source gas is a mixed gas of SiH4 and Si2H6 at a ratio of 4:1, and
the second amorphous thin film is a silicon thin film.

### Claim 6 (depends on 3)

The method of claim 3, wherein the second source gas further includes silane-based gas and germanium-based gas, and
the silane-based gas and germanium-based gas included in the second source gas are mixed at a ratio of 1:2.

### Claim 7 (depends on 3)

The method of claim 3, wherein silane-based gas further included in the second source gas is SiH4 and the second amorphous thin film is a silicon thin film,
the first source gas includes N2 15000 sccm, and
the second source gas includes N2 5000 sccm and H2 3000 sccm.

### Claim 8 (depends on 3)

The method of claim 3, wherein the second source gas further includes germanium-based gas, and
the second amorphous thin film is a germanium thin film.

### Claim 9 (depends on 1)

The method of claim 1, wherein the silane-based gas included in the first source gas is SiH4.

### Claim 10 (depends on 9)

The method of claim 9, wherein silane-based gas further included in the second source gas is Si2H6 and the second amorphous thin film is a silicon thin film,
the forming the first amorphous thin film is performed at 300° C., and
the forming the second amorphous thin film is performed at 400° C.

### Claim 11 (depends on 9)

The method of claim 9, wherein silane-based gas further included in the second source gas is a mixed gas of SiH4 and Si2H6 at a ratio of 4:1, and
the second amorphous thin film is a silicon thin film.

### Claim 12 (depends on 9)

The method of claim 9, wherein the second source gas further includes silane-based gas and germanium-based gas, and
the silane-based gas and germanium-based gas included in the second source gas are mixed at a ratio of 1:2.

### Claim 13 (depends on 9)

The method of claim 9, wherein silane-based gas further included in the second source gas is SiH4 and the second amorphous thin film is a silicon thin film,
the first source gas includes N2 15000 sccm, and
the second source gas includes N2 5000 sccm and H2 3000 sccm.

### Claim 14 (depends on 9)

The method of claim 9, wherein the second source gas further includes germanium-based gas, and
the second amorphous thin film is a germanium thin film.

### Claim 15 (depends on 1)

The method of claim 1, wherein the first thickness is 20 to 50 Å, the second thickness is 100 Å or more.

### Claim 16 (depends on 1)

The method of claim 1, wherein the predetermined thickness is 200 Å or more.