# US 10,246,770 B2 · Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film

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- Number: US 10,246,770 B2
- Document ID: US10246770B2
- Status: Granted
- Kind: B2
- Application number: 15/573,770
- Filed: 2016-06-24
- Published: 2018-05-31
- Granted: 2019-04-02
- Earliest claimed: 2015-06-26
- Assignees: Tanaka Kikinzoku Kogyo K.K.; Tokyo Institute of Technology
- Applicants: Tanaka Kikinzoku Kogyo K.K.; Tokyo Institute of Technology
- Inventors: Shunichiro Ohmi; Yasushi Masahiro
- Web page: https://patentgrep.com/patent/US10246770B2

## CPC

- C23C 14/5806: {Thermal treatment}
- C22C 27/00: Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C 28/00: Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
- C22C 30/00: Alloys containing less than 50% by weight of each constituent
- C23C 14/14: Metallic material, boron or silicon
- C23C 14/16: on metallic substrates or on substrates of boron or silicon
- C23C 14/165: {by cathodic sputtering}
- C23C 14/18: on other inorganic substrates
- C23C 14/185: {by cathodic sputtering}
- C23C 14/24: Vacuum evaporation
- C23C 14/34: Sputtering
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C23C 14/58: After-treatment
- C23C 16/42: Silicides
- C23C 28/34: {including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 64/011: {of electrodes ohmically coupled to a semiconductor}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10D 64/0131: {the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation}
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10P 14/412: {Deposition of metallic or metal-silicide materials}
- H10P 14/414: {of metal-silicide materials}
- H10P 14/44: Physical vapour deposition [PVD]
- C22C 5/04: Alloys based on a platinum group metal
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 14/46: by ion beam produced by an external ion source
- Y10T 428/12528: Semiconductor component
- Y10T 428/12535: with additional, spatially distinct nonmetal component
- Y10T 428/12875: Platinum group metal-base component
- Y10T 428/12993: Surface feature [e.g., rough, mirror]
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.

## Claims

### Claim 1

A silicide alloy film that is formed on a substrate containing Si: comprising, a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 4.0 eV or less, and Si having a work function of 4.3 eV or more and 4.9 eV or less; and in a relationship of the peak intensity (X) of a diffraction peak of a mixed crystal (M1xM2ySi) including the metal M1, the metal M2 and Si, the peak intensity (Y) of a diffraction peak of a silicide (M1aSi) of the metal M1 and the peak intensity (Z) of a diffraction peak of a silicide (M2bSi) of the metal M2, which are observed by X-ray diffraction analysis, the ratio ((Y+Z)/X) of the sum of Y and Z to X is 0.1 or less, wherein M1 is Pt and M2 is Hf.

### Claim 2 (depends on 1)

The silicide alloy film according to claim 1, wherein the content of Si is 33 at % or more and 50 at % or less.

### Claim 3 (depends on 1)

The silicide alloy film according to claim 1, wherein the total concentration of C and O as impurities is 5% by mass or less.

### Claim 4 (depends on 1)

The silicide alloy film according to claim 1, wherein the root mean surface roughness (RMS) is 5 nm or less.

### Claim 5 (depends on 1)

A method for producing the silicide alloy film according to claim 1, comprising forming on a Si substrate a thin-film including the metal M1 and the metal M2, and then heat-treating the Si substrate to silicify the metal M1 and the metal M2.