# US 10,246,745 B2 · DNA sequencing detection field effect transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,246,745 B2 - Document ID: US10246745B2 - Status: Granted - Kind: B2 - Application number: 15/958,669 - Filed: 2018-04-20 - Published: 2018-08-23 - Granted: 2019-04-02 - Earliest claimed: 2015-10-26 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Sanghoon Lee; Effendi Leobandung; Renee T. Mo - Web page: https://patentgrep.com/patent/US10246745B2 ## CPC - C12Q 1/6869: Methods for sequencing - G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors} - C12Q: MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS (immunoassay G01N33/53); COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A semiconductor structure is provided that can be used for DNA sequencing detection. The semiconductor structure includes a doped epitaxial source semiconductor material structure located on a first portion of a semiconductor substrate and a doped epitaxial drain semiconductor material structure located on a second portion of the semiconductor substrate. A gate dielectric portion is located on a third portion of the semiconductor substrate and positioned between the doped epitaxial source semiconductor material structure and the doped epitaxial drain semiconductor material structure. A non-stick nucleotide, DNA and DNA polymerase material structure is located atop the doped epitaxial source semiconductor material structure and atop the doped epitaxial drain semiconductor material structure, wherein a cavity is present in the non-stick nucleotide, DNA and DNA polymerase material structure that exposes a topmost surface of the gate dielectric portion. ## Claims ### Claim 1 A method of DNA sequencing detection, said method comprising: providing a semiconductor structure comprising a doped epitaxial source semiconductor material structure located on a first portion of a semiconductor substrate and a doped epitaxial drain semiconductor material structure located on a second portion of said semiconductor substrate; a gate dielectric portion located on a third portion of said semiconductor substrate and positioned entirely between, and spaced apart from, a sidewall edge of said doped epitaxial source semiconductor material structure and a sidewall edge of said doped epitaxial drain semiconductor material structure; and a non-stick nucleotide, DNA and DNA polymerase material structure located atop said doped epitaxial source semiconductor material structure and atop said doped epitaxial drain semiconductor material structure, wherein a cavity is present in said non-stick nucleotide, DNA and DNA polymerase material structure that exposes a topmost surface of said gate dielectric portion; forming a DNA polymerase on a portion of said topmost surface of said gate dielectric portion and within said cavity; attaching a DNA template to a surface of said DNA polymerase, wherein said DNA template is present in a solution that further contains various nucleotides; and measuring a change in threshold voltage caused by each nucleotide present in said solution by monitoring the change of drain current of said semiconductor structure. ### Claim 2 (depends on 1) The method of claim 1, wherein said semiconductor structure further comprises a source-side metal contact structure located on a portion of a topmost surface of said doped epitaxial source semiconductor material structure and a drain-side metal contact structure located on a portion of a topmost surface of said doped epitaxial drain semiconductor material structure. ### Claim 3 (depends on 2) The method of claim 2, wherein said source-side metal contact structure and said drain-side metal contact structure are each spaced apart from said non-stick nucleotide, DNA and DNA polymerase material structure. ### Claim 4 (depends on 1) The method of claim 1, further comprising a dielectric material liner portion located on a bottommost surface and a sidewall surface of said non-stick nucleotide, DNA and DNA polymerase material structure. ### Claim 5 (depends on 4) The method of claim 4, further comprising a hard mask portion located directly beneath said dielectric material liner portion. ### Claim 6 (depends on 5) The method of claim 5, further comprising a dielectric spacer located on exposed sidewall surface of said hard mask portion, said dielectric spacer having a portion that separates said gate dielectric portion from said doped epitaxial source semiconductor material structure or said doped epitaxial drain semiconductor material structure. ### Claim 7 (depends on 1) The method of claim 1, wherein said cavity has an upper portion of a first width and a lower portion of a second width, wherein said second width is less than the first width. ### Claim 8 (depends on 7) The method of claim 7, wherein said second width is from 10 nm to 150 nm. ### Claim 9 (depends on 1) The method of claim 1, wherein said DNA polymerase comprises Prokaryotic or Eukaryotic DNA polymerases. ### Claim 10 (depends on 1) The method of claim 1, wherein said DNA polymerase comprises Prokaryotic Family A polymerases. ### Claim 11 (depends on 1) The method of claim 1, wherein said forming of said DNA polymerase on said portion of said topmost surface of said gate dielectric portion comprises an immobilization process. ### Claim 12 (depends on 1) The method of claim 1, wherein said DNA template comprises a single strand of DNA in which a new strand of DNA is made. ### Claim 13 (depends on 12) The method of claim 12, further comprising a primer attached to the single strand of said DNA. ### Claim 14 A method of DNA sequencing detection, said method comprising: providing a semiconductor structure comprising a doped epitaxial source semiconductor material structure located on a first portion of a semiconductor substrate and a doped epitaxial drain semiconductor material structure located on a second portion of said semiconductor substrate; a gate dielectric portion located on a third portion of said semiconductor substrate and positioned between said doped epitaxial source semiconductor material structure and said doped epitaxial drain semiconductor material structure; a non-stick nucleotide, DNA and DNA polymerase material structure located atop said doped epitaxial source semiconductor material structure and atop said doped epitaxial drain semiconductor material structure, wherein a cavity is present in said non-stick nucleotide, DNA and DNA polymerase material structure that exposes a topmost surface of said gate dielectric portion; a dielectric material liner portion located on a bottommost surface and a sidewall surface of said non-stick nucleotide, DNA and DNA polymerase material structure; a hard mask portion located directly beneath said dielectric material liner portion; and a dielectric spacer located on exposed sidewall surface of said hard mask portion, said dielectric spacer having a portion that separates said gate dielectric portion from said doped epitaxial source semiconductor material structure or said doped epitaxial drain semiconductor material structure; forming a DNA polymerase on a portion of said topmost surface of said gate dielectric portion and within said cavity; attaching a DNA template to a surface of said DNA polymerase, wherein said DNA template is present in a solution that further contains various nucleotides; and measuring a change in threshold voltage caused by each nucleotide present in said solution by monitoring the change of drain current of said semiconductor structure. ### Claim 15 (depends on 14) The method of claim 14, further comprising a source-side metal contact structure located on a portion of a topmost surface of said doped epitaxial source semiconductor material structure and a drain-side metal contact structure located on a portion of a topmost surface of said doped epitaxial drain semiconductor material structure. ### Claim 16 (depends on 15) The method of claim 15, wherein said source-side metal contact structure and said drain-side metal contact structure are each spaced apart from said non-stick nucleotide, DNA and DNA polymerase material structure. ### Claim 17 (depends on 14) The method of claim 14, wherein said cavity has an upper portion of a first width and a lower portion of a second width, wherein said second width is less than the first width. ### Claim 18 (depends on 14) The method of claim 14, wherein said DNA template comprises a single strand of DNA in which a new strand of DNA is made. ### Claim 19 (depends on 18) The method of claim 18, further comprising a primer attached to the single strand of said DNA. ### Claim 20 (depends on 14) The method of claim 14, wherein said DNA polymerase comprises Prokaryotic or Eukaryotic DNA polymerases.