# US 10,246,620 B2 · CMP polishing agent, method for manufacturing thereof, and method for polishing substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,246,620 B2 - Document ID: US10246620B2 - Status: Granted - Kind: B2 - Application number: 15/303,564 - Filed: 2015-03-26 - Published: 2017-02-09 - Granted: 2019-04-02 - Earliest claimed: 2014-05-09 - Assignees: Shin-Etsu Chemical Co., Ltd. - Applicants: Shin-Etsu Chemical Co., Ltd. - Inventors: Mitsuhito Takahashi - Web page: https://patentgrep.com/patent/US10246620B2 ## CPC - C09K 3/1463: {Aqueous liquid suspensions} - B24B 7/228: {for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065)} - B24B 37/00: Lapping machines or devices; Accessories (B24B3/00 takes precedence) - B24B 37/044: {characterised by the composition of the lapping agent} - B24B 37/105: {the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement} - B24B 37/20: Lapping pads for working plane surfaces - C01F 17/235: Cerium oxides or hydroxides - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09G 1/04: Aqueous dispersions (C09G1/02 takes precedence) - H10P 52/402: {of semiconductor materials} - H10P 95/062: {involving a dielectric removal step} - H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations} - H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations - C01P 2004/62: Submicrometer sized, i.e. from 0.1-1 micrometer - C01P 2004/64: Nanometer sized, i.e. from 1-100 nanometer - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00}) - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent. ## Claims ### Claim 1 A CMP polishing agent, comprising polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, an average molecular weight of the copolymer of styrene and acrylonitrile is 500 or more and 20000 or less, and the copolymer of styrene and acrylonitrile is present in an amount of 0.1 part by mass or more and 5 parts by mass or less on the basis of 100 parts by mass of the polishing particles. ### Claim 2 (depends on 1) The CMP polishing agent according to claim 1, wherein the polishing particles are wet ceria particles. ### Claim 3 (depends on 2) The CMP polishing agent according to claim 2, wherein the pH is 3 or more and 7 or less. ### Claim 4 (depends on 3) The CMP polishing agent according to claim 3, wherein the CMP polishing agent is a CMP polishing agent for polishing an insulation film. ### Claim 5 (depends on 4) A method for polishing a substrate, comprising: moving the substrate and a turn table relatively to polish an insulation film on a polishing stop film formed on the substrate, with the insulation film being pressed against a polishing pad stuck on the turn table for polishing the substrate, while supplying the CMP polishing agent according to claim 4 onto the polishing pad. ### Claim 6 (depends on 5) The method for polishing a substrate according to claim 5, wherein the polishing stop film is a polysilicon film and the insulation film is a silicon oxide film. ### Claim 7 (depends on 4) A method for manufacturing the CMP polishing agent according to claim 4, comprising a step of: mixing: (i) the polishing particles, (ii) the water, and (iii) the copolymer of styrene and acrylonitrile having an average molecular weight of 500 or more and 20000 or less as the protective film-forming agent to manufacture the CMP polishing agent. ### Claim 8 (depends on 1) The CMP polishing agent according to claim 1, wherein the pH is 3 or more and 7 or less. ### Claim 9 (depends on 1) The CMP polishing agent according to claim 1, wherein the CMP polishing agent is a CMP polishing agent for polishing an insulation film. ### Claim 10 (depends on 1) A method for polishing a substrate, comprising: moving the substrate and a turn table relatively to polish an insulation film on a polishing stop film formed on the substrate, with the insulation film being pressed against a polishing pad stuck on the turn table for polishing the substrate, while supplying the CMP polishing agent according to claim 1 onto the polishing pad. ### Claim 11 (depends on 10) The method for polishing a substrate according to claim 10, wherein the polishing stop film is a polysilicon film and the insulation film is a silicon oxide film. ### Claim 12 (depends on 1) A method for manufacturing the CMP polishing agent according to claim 1, comprising a step of: mixing: (i) the polishing particles, (ii) the water, and (iii) the copolymer of styrene and acrylonitrile having an average molecular weight of 500 or more and 20000 or less as the protective film-forming agent to manufacture the CMP polishing agent.