Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)

A method, comprising:

• forming a first bottom electrode layer above a substrate in a film thickness direction;
• forming a first source layer above the first bottom electrode layer in the film thickness direction;
• forming a first impact ionization channel (i-channel) layer above the first source layer in the film thickness direction;
• forming a first drain layer above the first i-channel layer in the film thickness direction;
• forming a first upper electrode layer above the first drain layer in the film thickness direction to form a first stack that comprises the first bottom electrode layer, the first source layer, the first i-channel layer, the first drain layer, and the first upper electrode layer;
• forming a first gate layer positioned on sides of the first i-channel layer along a plane perpendicular to the film thickness direction in an element width direction, wherein the first gate layer is formed closer to the first drain layer than the first source layer;
• forming a perpendicular magnetic tunnel junction (pMTJ) structure above the first upper electrode layer that is electrically coupled to the first upper electrode layer;
• forming a second bottom electrode layer above the pMTJ in the film thickness direction that is electrically coupled to the pMTJ;
• forming a second drain layer above the second bottom electrode layer in the film thickness direction, the second drain layer being electrically coupled to the pMTJ;
• forming a second i-channel layer above the second drain layer in the film thickness direction;
• forming a second source layer above the second i-channel layer in the film thickness direction;
• forming a second upper electrode layer above the second source layer in the film thickness direction to form a second stack that comprises the second bottom electrode layer, the second drain layer, the second i-channel layer, the second source layer, and the second upper electrode layer;
• and
• forming a second gate layer positioned on sides of the second i-channel layer along the plane perpendicular to the film thickness direction in the element width direction, wherein the second gate layer is formed closer to the second drain layer than the second source layer.

A method, comprising:

• forming a substrate;
• forming an electrically conductive channel through the substrate in a film thickness direction;
• forming a first impact ionization metal-oxide semiconductor (I-MOS) above the substrate in the film thickness direction, the first I-MOS comprising a first steep slope field-effect transistor (FET), wherein the electrically conductive channel is configured to electrically couple to the first I-MOS;
• forming a perpendicular magnetic tunnel junction (pMTJ) structure above the first I-MOS in the film thickness direction, the pMTJ being electrically coupled in series to the first I-MOS;
• and
• forming a second I-MOS above the pMTJ in the film thickness direction, the second I-MOS comprising a second steep slope FET, wherein the pMTJ is electrically coupled in series to the second I-MOS.