Devices having an electron emitting structure

An x-ray emitting device comprising:

• an x-ray emitting construct, an electron emitting construct, at least one spacer, a voltage source and a gate interconnect lead;
• said at least one spacer situated such that the x-ray emitting construct and the electron emitting construct face each other;
• an evacuated inner gap between said x-ray emitting construct and said electron emitting construct;
• said x-ray emitting construct comprising an anode, the anode being an x-ray target;
• and
• said electron emitting construct comprising at least one active zone, each of said at least one active zone comprising at least one active area comprising:
• (a) a cathode;
• (b) a gated cone electron source, comprising a plurality of emitter tips arranged in an array;
• (c) a resistive layer situated between the gated cone electron source and the cathode;
• and
• (d) a gate electrode comprising a plurality of gate holes, the position of at least one of said plurality of gate holes corresponding to the position of at least one of said plurality of emitter tips;
• wherein each of said plurality of emitter tips is configured to emit an electron beam towards the x-ray emitting construct;
• wherein the gate electrode is connected to said voltage source through said gate interconnect lead;
• wherein the resistive layer is characterized by at least one feature selected from:
• the resistive layer is of a thickness greater than 300 nanometer or between 300 and 5000 nanometers;
• the resistive layer comprises SiCN;
• the resistive layer comprising a first barrier sublayer situated at the interface with the cathode;
• and
• the resistive layer comprising a second barrier sublayer situated at the interface with the gated cone electron source;
• and
• wherein the first barrier sublayer and the second barrier sublayer are characterized by at least one feature selected from:
• the first barrier sublayer and the second barrier sublayer are comprising SiCN or SiC having a silicon atomic percentage of less than 40%;
• and
• the first barrier sublayer and the second barrier sublayer are comprising amorphous carbon.