Resist underlayer film composition, patterning process, and method for forming resist underlayer film
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsHiroko Nagai, Takeru Watanabe, Daisuke Kori, Tsutomu Ogihara
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Abstract
Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
Claims20
A resist underlayer film composition, wherein the resist underlayer film composition is used for a multilayer resist method, comprising:
- (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1),
- (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group;
- and
- (B) an organic solvent,
- wherein R01 represents a hydrogen atom or a methyl group;
- and R02 represents a group selected from following formulae (1-1) to (1-3),
- wherein the dotted line represents a bonding hand.
Dependencies are inferred from the claim text.