Method for application of an overgrowth layer on a germ layer
AssigneeEV Group E. Thallner GmbH
InventorsGerald Kreindl, Harald Zaglmayr, Martin Eibelhuber
Life of this patent
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Abstract
A method for applying a masked overgrowth layer onto a seed layer for producing semiconductor components, characterized in that a mask for masking the overgrowth layer is imprinted onto the seed layer.
Claims14
A method for applying a masked overgrowth layer onto a seed layer for producing semiconductor components, wherein a mask for masking the overgrowth layer is imprinted onto the seed layer, the method comprising:
- providing a substrate with a seed layer having a seed layer surface;
- applying a mask material onto the seed layer surface, the mask material being at least one of a liquid and a sol-gel;
- positioning an imprint stamp above the deposited mask material;
- structuring the mask material by contacting the imprint stamp with the mask material;
- curing the mask material;
- demoulding of the imprint stamp to form a mask having mask passages, said demoulding including removing the imprint stamp from contact with the mask material;
- etching a residual layer of the mask material to expose the seed layer surface in the mask passages, the residual layer of the mask material being present in the mask passages after the demoulding of the imprint stamp;
- coating the seed layer surface exposed in the mask passages with a coating material;
- and
- growing the coating material to form an overgrowth layer that encloses the mask, the overgrowth layer having a desired height to obtain a desired end product with a defined thickness or a defined layer.
An end product, comprising:
- a seed layer for producing semiconductor components on which a cured mask material of at least one of a liquid and a sol-gel is disposed;
- and
- a masked overgrowth layer on the seed layer that encloses the cured mask material, the masked overgrowth layer having a lower dislocation density than the seed layer.
A method for applying a masked overgrowth layer onto a seed layer for producing semiconductor components, wherein a mask for masking the overgrowth layer is imprinted onto the seed layer, the method comprising:
- providing a substrate with a seed layer having a seed layer surface;
- applying a mask material onto the seed layer surface, the mask material being a sol-gel;
- positioning an imprint stamp above the deposited mask material;
- structuring the mask material by contacting the imprint stamp with the mask material;
- curing the mask material;
- demoulding of the imprint stamp to form a mask having mask passages, said demoulding including removing the imprint stamp from contact with the mask material;
- etching a residual layer of the mask material to expose the seed layer surface in the mask passages, the residual layer of the mask material being present in the mask passages after the demoulding of the imprint stamp;
- coating the seed layer surface exposed in the mask passages with a coating material;
- and
- growing the coating material to form an overgrowth layer that encloses the mask, the overgrowth layer having a desired height to obtain a desired end product with a defined thickness or a defined layer.
Dependencies are inferred from the claim text.