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US 10,241,391 B2Granted
Method for processing a carrier, a carrier, an electronic device and a lithographic mask
AssigneeInfineon Technologies AG
InventorsJens Schneider, Henning Feick, Marcel Heller, Dieter Kaiser
Life of this patent
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Abstract
Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.
Claims13
A carrier comprising:
- a doping profile comprising implanted ions, wherein the doping profile is generated by
- changing a three-dimensional structure of a mask layer arranged over the carrier to form at least one mask layer region comprising a substantially step-wise change of a thickness of the mask layer along a predefined direction parallel to a surface of the carrier;
- applying an ion implantation process to the at least one mask layer region to form at least one implanted region in the carrier;
- and
- implanted material in a first region of the carrier, wherein the implantation depth of the implanted material in the first region of the carrier is substantially at least one of step-wise decreasing or step-wise increasing along the predefined direction parallel to the surface of the carrier.
2 more elements
An electronic device, comprising:
- a carrier comprising:
- implanted material in a first region of the carrier, wherein an implantation depth of the implanted material in the first region of the carrier is continuously substantially step-wise changing along a predefined direction parallel to a surface of the carrier, and
- implanted material in a second region of the carrier,
- wherein the implantation depth of the implanted material in the first region of the carrier is substantially step-wise decreasing along the predefined direction parallel to the surface of the carrier, and
- wherein the implantation depth of the implanted material in the second region of the carrier is substantially step-wise increasing along the predefined direction parallel to the surface of the carrier.
2 more elements
A carrier comprising:
- a doping profile comprising implanted ions, wherein the doping profile is generated by
- changing a three-dimensional structure of a mask layer arranged over the carrier to form at least one mask layer region comprising a substantially step-wise change of a thickness of the mask layer along a predefined direction parallel to a surface of the carrier;
- applying an ion implantation process to the at least one mask layer region to form at least one implanted region in the carrier;
- and
- implanted material in a first region of the carrier, wherein an implantation depth of the implanted material in the first region of the carrier is continuously substantially step-wise changing along a predefined direction parallel to a surface of the carrier, wherein a spatial distribution of the implanted material includes regions having the same implanted material concentration, wherein the regions having the same implanted material concentration form planar layers, which are not perpendicular to an implantation direction and not parallel to the surface of the carrier.
2 more elements
Dependencies are inferred from the claim text.