Die crack detector and method therefor
AssigneeNXP USA, Inc.
InventorsAudel Sanchez, Jose Luis Suarez, Michele Lynn Miera
Life of this patent
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Abstract
A die crack detector and method are provided. A first metal trace is formed over a substrate with the first metal trace configured to extend around a perimeter of a semiconductor die. A second metal trace is formed over the first metal trace with the second metal trace configured to overlap the first metal trace. A dielectric material is disposed between the first and second metal traces. A first detector terminal is coupled to the first metal trace and a second detector terminal coupled to the second metal trace. The detector terminals are configured to receive a predetermined voltage.
Claims20
A die crack detector comprising:
- a first metal trace formed over a substrate, the first metal trace configured to substantially extend around a perimeter of a semiconductor die;
- a second metal trace formed over the first metal trace, the second metal trace configured to at least substantially overlap the first metal trace;
- a dielectric material disposed between the first metal trace and the second metal trace;
- a first detector terminal coupled to the first metal trace, the first detector terminal configured to receive a first power supply voltage;
- and
- a second detector terminal coupled to the second metal trace, the second detector terminal configured to receive a second power supply voltage.
A die crack detector comprising:
- a metal-insulator-metal (MIM) capacitor structure comprising:
- a first metal trace formed over a substrate, the first metal trace arranged to at least substantially extend around a perimeter of a semiconductor die,
- a second metal trace formed over the first metal trace, the second metal trace arranged to at least substantially overlap the first metal trace, and
- a dielectric material disposed between the first metal trace and the second metal trace;
- a first detector terminal coupled to the first metal trace, the first detector terminal configured to receive a first power supply voltage;
- and
- a second detector terminal coupled to the second metal trace, the second detector terminal configure to receive a second power supply voltage.
A method comprising:
- providing a metal-insulator-metal (MIM) capacitor structure on a semiconductor die, the MIM capacitor structure comprising:
- a first metal trace formed over a substrate of the semiconductor die, the first metal trace arranged to at least substantially extend around a perimeter of the semiconductor die,
- a second metal trace formed over the first metal trace, the second metal trace arranged to at least substantially overlap the first metal trace, and
- a dielectric material disposed between the first metal trace and the second metal trace;
- coupling a test circuit to the first and second metal traces of the MIM capacitor structure;
- applying a predetermined test voltage differential across the first and second metal traces of the MIM capacitor structure;
- and
- measuring a leakage current of the MIM capacitor structure while the predetermined test voltage is applied.
Dependencies are inferred from the claim text.