Garnet material, method for its manufacturing and radiation-emitting component comprising the garnet material
AssigneeOSRAM Opto Semiconductors GmbH
InventorsMadis Raukas, Krister Bergenek, George C. Wei, Nathan M. Zink, Stefan Lange
Life of this patent
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Abstract
A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0≤x≤2.
Claims12
A radiation-emitting component comprising a converter chip that consists of a ceramic material, which comprises a garnet having the structure A3-xB5O12:Dx and a barium-containing oxide of the formula BazAl2yOz+3y,
- wherein in the garnet A3-xB5O12:Dx:
- A is selected from the group consisting of lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal, and mixtures thereof,
- B is selected from the group consisting of aluminum, scandium, gallium, indium, boron, and mixtures thereof,
- D is at least one dopant selected from chromium, manganese and rare earth metals, and 0≤x≤2,
- wherein in the barium aluminum oxide BazAl2yOz+3y, z and y are integers >0, and
- wherein in the converter chip which consists of the ceramic material, the amount of barium is 0.01 to 2.5 wt %, and the garnet material shows a porosity of 0.001 to 2 vol % of the entire volume of the material,
- wherein the barium aluminium oxide is present as separate phases different from the phase of the A3-xB5O12:Dx, at least 99 wt % of the total amount of barium is present in the separate phases, over 95% of the barium containing phases have a diameter smaller than 5 μm and the grain size of the garnet is 10 to 20 μm, the converter chip which consists of the ceramic material is highly transparent and the total forward transmittance at a wavelength of 2000 nm is at least 66%, and the converter chip which consists of the ceramic material converts at least partially a primary radiation of a first wavelength in a secondary radiation of a second wavelength that is longer than the first wavelength, and
- wherein the radiation-emitting component has a luminous efficacy of better than 290 lm/W.
A converter chip consisting of a ceramic material for converting at least partially a primary radiation of a first wavelength in a secondary radiation of a second wavelength that is longer than the first wavelength, the ceramic material comprising a garnet having the structure A3-xB5O12:Dx and a barium-containing oxide of the formula BazAl2yOz+3y,
- wherein in the garnet A3-xB5O12:Dx:
- A is selected from the group consisting of lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal, and mixtures thereof,
- B is selected from the group consisting of aluminum, scandium, gallium, indium, boron, and mixtures thereof,
- D is at least one dopant selected from chromium, manganese and rare earth metals, and 0≤x≤2,
- wherein in the barium aluminum oxide BazAl2yOz+3y, z and y are integers >0,
- wherein in the ceramic material, the amount of barium is 0.01 to 2.5 wt % and the garnet material shows a porosity of 0.001 to 2 vol % of the entire volume of the material, and
- wherein the barium aluminium oxide is present as separate phases different from the phase of the A3-xB5O12:Dx, at least 99 wt % of the total amount of barium is present in the separate phases, over 95% of the barium containing phases have a diameter smaller than 5 μm and the grain size of the garnet is 10 to 20 μm, the ceramic material is transparent, and the total forward transmittance at a wavelength of 2000 nm is at least 66%.
Dependencies are inferred from the claim text.