Block polymers for sub-10 nm patterning
AssigneeBoard of Regents, The University of Texas System
InventorsCarlton Grant Willson, Gregory Blachut, Michael Maher, Yusuke Asano, Christopher John Ellison
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Abstract
The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.
Claims11
A block copolymer comprising 5-vinylbenzo [d][1,3]dioxole, wherein said block copolymer is part of a layered structure.
Sub-10 nm nanostructures comprising a block copolymer comprising 5-vinylbenzo[d][1,3]dioxole.
A method to achieve sub-10 nm nanostructures, comprising a) coating a block copolymer film on a substrate, said block copolymer comprising 5-vinylbenzo [d][1,3]dioxole;
- b) applying a top coat on top of the block copolymer, and c) annealing under conditions such that sub-10 nm nanostructures form.
A method of creating a layered structure, comprising:
- a) providing a surface, a surface treatment layer, a block copolymer comprising 5-vinylbenzo [d][1,3]dioxole, and a top coat composition;
- b) treating said surface with said surface treatment layer to create a first layer on said surface;
- c) coating said first layer with block copolymer to create a second layer on said surface comprising a block copolymer film;
- and d) coating said second layer with said top coat composition so as to create a third layer on said surface, said third layer comprising a top coat on said block copolymer film surface, said first, second and third layers comprising a layered structure.
Dependencies are inferred from the claim text.