Active inductor and amplifier circuit
AssigneeToshiba Memory Corporation
InventorsYuta Tsubouchi, Junji Wadatsumi
Life of this patent
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Abstract
According to an embodiment, an active inductor has a first conductivity type MOS transistor with a source that is connected to an electrical power source supply line and a drain that is connected to an output terminal. It has a capacitance between a gate of the first conductivity type MOS transistor and the electrical power source supply line. It has a diode element that is connected between a drain and a gate of the first conductivity type transistor. It has an electric current source that supplies a bias electric current in a forward direction to the diode element.
Claims20
An active inductor, comprising:
- a first conductivity type first MOS transistor with a source, that is connected to an electrical power source supply line and a drain that is connected to an output terminal;
- a capacitance between a gate of the first conductivity type first MOS transistor and the electrical power source supply line;
- a diode element that is connected between the drain and the gate of the first conductivity type first MOS transistor;
- and
- an electric current source that supplies a bias electric current in a forward direction to the diode element.
An amplifier circuit, comprising:
- a first electrical power source supply line where a first electric voltage is applied thereto;
- a second electrical power source supply line where a second electric voltage is applied thereto;
- a bias circuit that is driven by an electric voltage between the first electrical power source supply line and the second electrical power source supply line and generates a predetermined bias electric voltage;
- a first conductivity type first MOS transistor, a first conductivity type second MOS transistor, and a first conductivity type third MOS transistor, where biasing between gates and sources thereof is executed by the predetermined bias electric voltage of the bias circuit;
- a first conductivity type fourth MOS transistor with a source that is connected to a drain of the first conductivity type first MOS transistor, a gate that is connected to a second signal input terminal, and a drain that is connected to a first signal output terminal;
- a first conductivity type fifth MOS transistor with a source that is connected to a drain of the first conductivity type first MOS transistor, a gate that is connected to a second signal input terminal, and a drain that is connected to a second signal output terminal;
- a first active inductor that is connected between the drain of the first conductivity type fourth MOS transistor and the first electrical power source supply line;
- and
- a second active inductor that is connected between the drain of the first conductivity type fifth MOS transistor and the first electrical power source supply line;
- wherein the first active inductor includes:
- a second conductivity type sixth MOS transistor with a source that is connected to the first electrical power source supply line, a drain that is connected to the drain of the first conductivity type fourth MOS transistor, and a gate that is con nee ted to a drain of the first conductivity type second MOS transistor;
- a first capacitance between the gate of the second conductivity type sixth MOS transistor and the first electrical power source supply line;
- and
- a first diode element that is connected between the drain and the gate of the second conductivity type sixth MOS transistor, and
- wherein the second active inductor includes:
- a second conductivity type seventh MOS transistor with a source that is connected to the first electrical power source supply line, a drain that is connected to the drain of the first conductivity type fifth MOS transistor, and a gate that is connected to a drain of the first conductivity type third MOS transistor;
- a second capacitance between the gate of the second conductivity type seventh MOS transistor and the first electrical power source supply line;
- and
- a second diode element that is connected between the drain and the gate of the second conductivity type seventh MOS transistor.
Dependencies are inferred from the claim text.