Method of forming a composite conductive film

A method of fabricating a composite conductive film, comprising:

• providing, as a matrix, a layer of cross-linkable material, wherein the layer of the cross-linkable material has a surface and is in a non-cross-linked state;
• applying a plurality of inorganic nanowires to a surface of a sacrificial superstrate, wherein the inorganic nanowires are, in isolated form, characterized by a first conductivity stability temperature;
• embedding at least some of the plurality of inorganic nanowires into the layer of cross-linkable material to form an inorganic mesh within the layer of cross-linkable material, thereby forming the composite conductive film, wherein embedding the at least some of the plurality of inorganic nanowires into the layer of the cross-linkable material comprises:
• laminating the surface of the sacrificial superstrate to the surface of the layer of the cross-linkable material, wherein the layer of the cross-linkable material is in a liquid state when the surface of the sacrificial superstrate is laminated to the surface of the layer of the cross-linkable material;
• while the surface of the sacrificial substrate is laminated to the surface of the layer of the cross-linkable material, cross-linking the cross-linkable material within at least a surface portion of the composite conductive film, wherein following the cross-linking, the cross-linkable material within at least the surface portion of the composite conductive film is in a cross-linked state;
• and
• after cross-linking the cross-linkable material within at least a surface portion of the composite conductive film, removing the sacrificial superstrate;
• wherein cross-linking the cross-linkable material within at least the surface portion of the composite conductive film results in at least the surface portion of the composite conductive film having a second conductivity stability temperature that is greater than the first conductivity stability temperature;
• wherein, prior to the cross-linking, the cross-linkable material comprises monomers and/or oligomers;
• and
• wherein the composite conductive film is characterized by a sheet resistance having a temperature coefficient that is less than 0.002 (ΩK)−1 between the first conductivity stability temperature and the second conductivity stability temperature.