Selective deposition of thin film dielectrics using surface blocking chemistry

A method of depositing a film, the method comprising:

• providing a substrate comprising a first substrate surface having a hydroxyl-terminated surface and a second substrate surface having a hydrogen-terminated surface, one or more of the first substrate surface and the second substrate surface comprising a dielectric;
• reacting the hydroxyl-terminated surface of the first substrate surface with a silylamide soak to form a silyl ether-terminated surface;
• and
• depositing a silicon nitride film selectively on the second substrate surface over the first substrate surface by an atomic layer deposition process in which the substrate is sequentially exposed to a silicon containing gas and a nitrogen-containing gas.

A method of depositing a film, the method comprising:

• providing a substrate comprising a first substrate surface including a hydroxyl-terminated surface and a second substrate surface including a hydrogen-terminated surface, one or more of the first substrate surface and the second substrate surface comprising a dielectric;
• soaking a substrate comprising a hydroxyl-terminated first substrate surface and a hydrogen-terminated second substrate surface with a silylamide to react with the hydroxyl-terminated first substrate surface to form a silyl ether-terminated substrate surface, the silylamide comprising one or more of 1-trimethylsilylpyrrolidine, 1-trimethylsilylpyrrole or 3,5-dimethyl-1-trimethylsilylpyrazole;
• and
• forming a silicon nitride film on the second substrate surface selectively over the first substrate surface by sequentially exposing the substrate to a silicon containing gas in a first process region, laterally move the substrate through a gas curtain to a second process region and expose the substrate to a nitrogen-containing gas in the second process region.