Solid-state imaging device

A solid-state imaging device comprising:

• a first semiconductor substrate to which light is incident;
• a second semiconductor substrate that is stacked on a surface of the first semiconductor substrate, the surface being opposite with respect to a surface on which the light is incident to the first semiconductor substrate;
• n first photoelectric conversion devices that are periodically arranged in the first semiconductor substrate, the n first photoelectric conversion devices generating first electric charge signals by performing photoelectric conversion of the incident light;
• n first reading circuits arranged in correspondence with each of the n first photoelectric conversion devices in the first semiconductor substrate, each of the n first reading circuits accumulating the first electric charge signal generated by a corresponding one of then first photoelectric conversion devices, and each of the n first reading circuits outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal;
• a driving circuit that outputs the first pixel signal by sequentially driving each of the n first reading circuits;
• m second photoelectric conversion devices that are periodically arranged in one of the first semiconductor substrate and the second semiconductor substrate, the m second photoelectric conversion devices generating second electric charge signals by performing photoelectric conversion of the incident light;
• and
• m second reading circuits that sequentially output a second pixel signal indicating a change in the second electric charge signal, the second electric charge signal being generated by a corresponding second photoelectric conversion device among the m second photoelectric conversion devices,
• wherein each of the m second reading circuits includes:
• a detection circuit that detects a temporal change of the second electric charge signal generated by the corresponding one of the second photoelectric conversion devices and the detection circuit outputs an event signal indicating a direction of a change when a change exceeding a predetermined threshold is detected;
• and
• a pixel signal generating circuit that is arranged in the second semiconductor substrate and the pixel signal generating circuit outputs the second pixel signal, the second pixel signal being generated by adding address information indicating a position at which the corresponding one of the second photoelectric conversion devices is arranged to the event signal,
• wherein n is a natural number equal to 2 or more than 2, and
• wherein m is a natural number equal to 2 or more than 2.