Back to results
US 10,209,323 B2Granted
Group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes
AssigneeNorthwestern University
InventorsBruce W. Wessels, Steven J. May
Life of this patent
Estimating the term…
Abstract
Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.
Claims7
A magnetodiode device comprising a p-type ferromagnetic semiconductor component comprising a compound of a formula
- (In1-xMnx)As
- wherein x is greater than zero and less than about 0.2;
- an n-type non-magnetic semiconductor component comprising a compound of a formula InAs;
- a diode coupled to said ferromagnetic semiconductor component and said non-magnetic semiconductor component;
- and
- a voltage source for application of voltage across said device,
- said device positioned in an applied magnetic field, whereby magnetoresistance thereof responsive to said applied magnetic field is positive under said magnetic field applied from about parallel to about perpendicular to direction of a current flow through said diode of said device.
4 more elements
A magnetodiode device comprising a p-type ferromagnetic semiconductor component comprising a compound of a formula
- (In1-xMnx)As
- wherein x is greater than zero and less than about 0.04;
- an n-type non-magnetic semiconductor component comprising a compound of a formula InAs;
- a diode coupled to said ferromagnetic semiconductor component and said non-magnetic semiconductor component;
- and
- a voltage source for application of voltage across said device,
- said device positioned in an applied magnetic field, whereby magnetoresistance thereof responsive to said applied magnetic field is positive under said magnetic field applied from about parallel to about perpendicular to direction of a current flow through said diode of said device.
4 more elements
Dependencies are inferred from the claim text.