Integrated circuit sensor device for charge detection hybridizing a lateral metal oxide semiconductor field effect transistor (MOSFET) and a vertical bipolar junction transistor (BJT)

An integrated sensor device, comprising:

• a lateral Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a vertical Bipolar Junction Transistor (BJT) arranged in a semiconductor substrate,
• wherein the MOSFET is connected in series to the base of the vertical BJT,
• wherein the MOSFET is arranged to be connected at the semiconductor substrate surface, and an emitter of the BJT is located at the semiconductor substrate surface,
• wherein a drain-drift region of said MOSFET is part of the base-region of said BJT within the semiconductor substrate, the drain-drift region thus making electrical contact to the base of the BJT, and
• wherein a lateral distance of the drain-drift region of the MOSFET to the emitter of the BJT is greater than a vertical distance between the emitter and a buried layer that operates as a collector of the BJT.