Physical quantity sensing semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first substrate having one side on which a sensing unit for outputting a sensor signal corresponding to a physical quantity is arranged and a plurality of diffusion wiring layers electrically connected to the sensing unit are arranged by impurity diffusion;
• and
• a second substrate having one side which is bonded to the one side of the first substrate, wherein:
• an air tight chamber is provided between the first substrate and the second substrate;
• the sensing unit is sealed in the air tight chamber;
• the first substrate includes an outer edge portion as a portion of the one side of the first substrate surrounding the plurality of diffusion wiring layers, the plurality of diffusion wiring layers being arranged in an inner edge portion;
• and
• the outer edge portion has an impurity concentration which is constant in a circumferential direction along an edge of the first substrate.