Monolithic integration of ultraviolet and infrared radiation detectors and manufacturing process thereof
AssigneeSTMicroelectronics S.r.l.
InventorsMassimo Cataldo Mazzillo, Antonella Sciuto
Life of this patent
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Abstract
A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.
Claims20
A process for manufacturing a semiconductor device for flame detection, comprising:
- in a semiconductor body of a first conductivity type, which includes a front surface and a cathode region, forming an anode region of a second conductivity type, which extends within said semiconductor body, starting from the front surface, and forms, together with the cathode region, a junction of a photodiode configured to detect ultraviolet radiation emitted by flames;
- forming a supporting dielectric region on the semiconductor body;
- and
- forming, on the supporting dielectric region, a sensitive region having a resistance configured to vary as a function of the infrared radiation emitted by the flames.
A method of forming an electronic device, the method comprising:
- forming a semiconductor device for flame detection, wherein forming the semiconductor device includes:
- forming an anode region in a semiconductor body having a first conductivity type and a front surface and including a cathode region, the anode region having a second conductivity type, extending within said semiconductor body starting from the front surface, and forming, together with the cathode region, a junction of a photodiode configured to detect ultraviolet radiation emitted by flames;
- forming a supporting dielectric region on the semiconductor body;
- and
- forming a sensitive region arranged on the supporting dielectric region and having a resistance that is configured to vary as a function of infrared radiation emitted by the flames;
- and
- forming a package containing the semiconductor device.
A method of forming a flame-detection system, comprising:
- forming a semiconductor device by steps including:
- forming an anode region in a semiconductor body having a first conductivity type and a front surface and including a cathode region, the anode region having a second conductivity type, extending within said semiconductor body starting from the front surface, and forming, together with the cathode region, a junction of a photodiode configured to detect ultraviolet radiation emitted by flames;
- forming a supporting dielectric region on the semiconductor body;
- and
- forming a sensitive region arranged on the supporting dielectric region and having a resistance that is configured to vary as a function of infrared radiation emitted by the flames, wherein said photodiode is configured to generate avalanche currents in response to absorption of ultraviolet photons;
- electrically coupling, to the semiconductor device, a first electronic circuit configured to generate a first electrical signal indicating that the avalanche currents generated by the photodiode have exceeded a current threshold;
- electrically coupling, to the semiconductor device, a second electronic circuit configured to generate a second electrical signal indicating the resistance of the sensitive region;
- and
- electrically coupling, to the first and second electronic circuits, a processing unit configured to determine quantities indicating detection of said ultraviolet radiation and of said infrared radiation as a function of the first and second electrical signals, respectively.
A process for manufacturing a semiconductor device for flame detection, the process comprising:
- forming, on a front surface of a semiconductor body, a first dielectric layer;
- forming, within the first dielectric layer, an opening;
- forming, in the opening, a filling region of a first metal material;
- forming a second dielectric layer on the filling region and the first dielectric layer, the filling region being accessible laterally through a pair of lateral openings;
- forming, on the second dielectric layer, a sensitive region having a resistance configured to vary as a function of the infrared radiation emitted by the flames;
- and
- removing the filling region to form a cavity directly under the sensitive region.
Dependencies are inferred from the claim text.