Processing facility for manufacturing integrated circuits from semiconductor wafers as well as perforated panel for a processing facility

A processing facility for manufacturing integrated circuits on semiconductor wafers, the processing facility comprising:

• at least one radiation generator that generates an EUV (extreme ultraviolet) radiation that is supplied to at least one lithography machine, housed in a clean room of a factory building, for exposure of the semiconductor wafers;
• wherein the at least one radiation generator is housed in a building or a building section, wherein the building or the building section is separate from the factory building;
• at least one beam guide extending from the building or the building section to the factory building, wherein the EUV radiation is supplied from the building or the building section through the at least one beam guide to the factory building;
• at least one supply line branching off at an obtuse angle from the at least one beam guide inside the factory building, wherein at least a portion of the EUV radiation is supplied through the at least one supply line to the lithography machine;
• wherein the clean room comprises a perforated floor comprised of perforated panels, wherein the perforated panels each have a quadrangular contour, wherein the perforated panels include a passage-carrying perforated panel comprising a passage with a rectangular contour;
• wherein the at least one supply line extends through the passage with the rectangular contour into the clean room;
• wherein the passage-carrying perforated panel comprises a center plane oriented vertically relative to the perforated floor and wherein the passage with the rectangular contour has two parallel sides positioned at a slant relative to the center plane, when viewing the passage-carrying perforated panel in a plan view in a vertical direction relative to the perforated floor.