Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
AssigneeShowa Denko K.K.
InventorsDaisuke Muto, Jun Norimatsu
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Abstract
Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.
Claims16
A chemical vapor phase growth device comprising:
- a wafer support,
- wherein the wafer support comprising:
- a wafer mounting surface having an upper surface on which a wafer is mounted;
- and
- a wafer support portion that rises to surround the wafer to be mounted,
- wherein a height from a portion of a reaction space side-upper surface of the wafer support portion, which is most distant from the wafer mounting surface, to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.
Dependencies are inferred from the claim text.