Crystalline gallium nitride containing flourine
AssigneeSoraa, Inc.
InventorsMark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Abstract
A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
Claims20
A crystal comprising:
- a single crystal of GaN having a wurtzite structure;
- and
- fluorine having a concentration of at least 0.04 ppm.
A crystal made from a process comprising:
- providing a nucleation center in a first region of a chamber;
- providing a gallium nitride source material in a second region of the chamber;
- providing a solvent in the chamber, the solvent comprising nitrogen;
- providing a mineralizer in the chamber, the mineralizer comprising fluorine;
- and
- heating the chamber and performing ammonothermal growth of GaN on the nucleation center under conditions to grow a single crystal of GaN having a wurtzite and having a concentration of fluorine of at least 0.04 ppm.
Dependencies are inferred from the claim text.