Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
AssigneeThe Regents of the University of Colorado, a body corporate
InventorsSteven M. George, Younghee Lee, Nicholas Johnson
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Abstract
The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises contacting a solid substrate comprising a first metal compound with an oxidant, optionally contacting the solid substrate with a second metal compound, and then contacting the modified solid substrate with a fluorinating agent, whereby ALE of the solid substrate is promoted.
Claims24
A method of promoting atomic layer etching (ALE) on a solid substrate comprising a first metal compound, the method comprising:
- (a) contacting at least a portion of the surface of the solid substrate with an oxidant, whereby a first metal oxide is formed on the portion of surface of the solid substrate contacted with the oxidant;
- and
- (b) contacting at least a portion of the surface of the first metal oxide with a fluorinating agent, whereby a volatile metal fluoride is formed;
- whereby ALE of the solid substrate is promoted.
A method of promoting atomic layer etching (ALE) on a solid substrate comprising a first metal compound, the method comprising:
- (a) contacting at least a portion of the surface of the solid substrate with an oxidant, whereby a first metal oxide is formed on the portion of surface of the solid substrate contacted with the oxidant;
- (b) contacting at least a portion of the surface of the first metal oxide with a second metal compound, whereby a second metal oxide is formed on the portion of surface of the first metal oxide contacted with the second metal compound and whereby a volatile first metal species is further formed;
- and
- (c) contacting at least a portion of the surface of the second metal oxide with a fluorinating agent, whereby a volatile metal fluoride is formed;
- whereby ALE of the solid substrate is promoted.
Dependencies are inferred from the claim text.