Synthesis and use of precursors for ALD of group VA element containing thin films
AssigneeASM IP Holding B.V.
InventorsViljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
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Abstract
Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
Claims13
A method for making a precursor comprising a group VA element, the method comprising:
- forming a first product by reacting a Group IA metal with a compound comprising a group VA element, wherein the VA element is As;
- and
- subsequently combining a second reactant comprising R1R2R3SiX with the first product, wherein R1, R2 and R3 are alkyl groups with one or more carbon atoms and X is a halogen atom, thereby forming a compound with the formula L(SiR1R2R3)3, wherein L is the group VA element.
A method for making a precursor comprising a group VA element, comprising:
- forming a first product by reacting a Group IA metal with a compound comprising a group VA element, wherein the VA element is As;
- and
- subsequently combining a second reactant comprising R1R2R3AX with the first product, wherein R1, R2 and R3 are alkyl groups with one or more carbon atoms, A is Si, Sn, or Ge and X is a halogen atom, thereby forming group VA element containing compound with the formula L(AR1R2R3)3, wherein L is the group VA element, wherein the group VA element is As.
Dependencies are inferred from the claim text.