Formulations for chemical mechanical polishing pads and CMP pads made therewith

A polishing pad for polishing a substrate chosen from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, the polishing pad being formed from spraying a one shot formulation, the one shot formulation being a two component solvent free and substantially water free formulation comprising a liquid aromatic isocyanate component having an unreacted isocyanate (NCO) concentration of from 15 to 40 wt. %, based on the total solids weight of the aromatic isocyanate component, the isocyanate being a linear isocyanate-terminated urethane prepolymer of methylene diphenyl diisocyanate or a methylene diphenyl diisocyanate dimer, 35 to 50 wt. % of a liquid polyol component of a polyol having a polyether backbone and having from 5 to 7 hydroxyl groups per molecule and the liquid polyol forming soft segments, an isocyanate extender and a curative of one or more polyamine or diamine, wherein the reaction mixture comprises 50 to 65 wt. % of hard segment materials, based on the total weight of the reaction mixture, and, further wherein, the stoichiometric ratio of the sum of the total moles of amine (NH2) groups and the total moles of hydroxyl (OH) groups in the reaction mixture to the total moles of unreacted isocyanate (NCO) groups in the reaction mixture ranges from 0.8:1.0 to 1.1:1.0 and wherein the polishing pad has a matrix and the matrix has a tensile modulus of at least 240 MPa and an elongation at break of at least 130%.