Methods of forming silicon carbide by spark plasma sintering
AssigneeBattelle Energy Alliance, LLC
InventorsHenry S Chu, Robert C O'Brien, Steven K Cook, Michael P Bakas
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Abstract
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
Claims18
A method of forming silicon carbide by spark plasma sintering, the method comprising:
- loading a powder comprising silicon carbide into a die;
- exposing the powder to a current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder;
- while the powder is exposed to the peak temperature, exposing the powder to a current density less than about 0.1 A/mm2 for between about 30 seconds and about 5 minutes to form a sintered silicon carbide structure;
- and
- cooling the sintered silicon carbide structure.
Dependencies are inferred from the claim text.