Thin film transistor, display substrate and display panel having the same, and fabricating method thereof
AssigneeBoe Technology Group Co., Ltd.
InventorsKe Wang, Ce Ning
Life of this patent
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Abstract
The present application discloses a thin film transistor, a display substrate and display panel having the same, and a fabricating method thereof. The thin film transistor includes a base substrate; an active layer on the base substrate having a channel region, a first electrode contact region, and a second electrode contact region; and a first electrode on a side of the first electrode contact region distal to the base substrate; and a second electrode on a side of the second electrode contact region distal to the base substrate; the first electrode and the second electrode being made of an amorphous carbon material.
Claims20
A thin film transistor, comprising:
- a base substrate;
- an active layer on the base substrate comprising a channel region, a first electrode contact region, and a second electrode contact region;
- and
- a first electrode on a side of the first electrode contact region distal to the base substrate;
- and a second electrode on a side of the second electrode contact region distal to the base substrate;
- the first electrode and the second electrode being made of an amorphous carbon material;
- wherein the amorphous carbon material comprises a hydrogenated amorphous carbon material.
A method of fabricating a thin film transistor, comprising:
- forming an active layer on a base substrate having a channel region, a first electrode contact region, and a second electrode contact region;
- forming a first electrode on a side of the first electrode contact region distal to the base substrate;
- and
- forming a second electrode on a side of the second electrode contact region distal to the base substrate;
- the first electrode and the second electrode being made of an amorphous carbon material;
- wherein the step of forming the active layer, the step of forming the first electrode, and the step of forming the second electrode comprise:
- sequentially forming a semiconductor material layer and an amorphous carbon material layer on the base substrate;
- patterning the semiconductor material layer to form the active layer;
- and
- patterning the amorphous carbon material layer to form the first electrode and the second electrode.
Dependencies are inferred from the claim text.