Stacked dies and methods for forming bonded structures
AssigneeInvensas Bonding Technologies, Inc.
InventorsCyprian Emeka Uzoh, Arkalgud R. Sitaram, Paul Enquist
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Abstract
In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
Claims30
A method for forming a bonded structure, the method comprising:
- directly bonding a first singulated integrated device die to a carrier without an intervening adhesive such that respective bonding surfaces of the first singulated integrated device die and the carrier are in direct contact;
- after directly bonding, thinning the first integrated device die;
- and
- providing a protective material comprising a first layer on an exposed surface of the first integrated device die.
A method for forming a bonded structure, the method comprising:
- mounting a first singulated integrated device die to a carrier;
- after mounting, thinning the first integrated device die;
- and
- providing a protective material comprising a first layer on an exposed surface of the first integrated device die;
- removing at least a portion of the first layer;
- and
- providing an electrical interconnect exposed through at least the exposed surface of the first integrated device die.
A method for forming a bonded structure, the method comprising:
- mounting a first singulated integrated device die to a carrier;
- after mounting, thinning the first integrated device die;
- and
- providing a protective material comprising a first layer on an exposed surface of the first integrated device die,
- wherein providing the protective material comprises depositing the first layer to a thickness no less than a thickness of the first integrated device die, the thickness of the first integrated device die defined between a back surface and a front surface of the first integrated device die.
A bonded structure comprising:
- a carrier;
- a first integrated device die having a lower surface directly bonded to an upper surface of the carrier without an intervening adhesive such that the lower surface of the first integrated device die and the upper surface of the carrier are in direct contact, the first integrated device die comprising an upper surface opposite the lower surface and a side surface between the upper and lower surfaces of the first integrated device die;
- a second integrated device die directly bonded to the upper surface of the first integrated device die;
- and
- a protective material comprising a first layer having a first portion disposed on the side surface of the first integrated device die.
A method for forming a bonded structure, the method comprising:
- directly bonding a first integrated device die to a carrier without an intervening adhesive such that respective bonding surfaces of the first integrated device die and the carrier are in direct contact;
- and
- after directly bonding, providing a protective material comprising a first layer on a surface of the first integrated device die;
- and
- planarizing at least a portion of the first layer to remove a portion of the first integrated device die.
A method for forming a bonded structure, the method comprising:
- mounting a first integrated device die to a carrier;
- and
- after mounting, providing a protective material comprising a first layer on a surface of the first integrated device die;
- and
- planarizing at least a portion of the first layer to remove a portion of the first integrated device die, wherein the first layer has a coefficient of thermal expansion that is within 10 ppm/° C. of a coefficient of thermal expansion of the first integrated device die.
Dependencies are inferred from the claim text.