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US 10,199,502 B2Granted
Structure of S/D contact and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, Tung Ying Lee, Chun-Hsiang Fan
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Abstract
A semiconductor device includes a fin feature in a substrate, a stack of semiconductor layers over the fin feature. Each of the semiconductor layers does not contact each other. The device also includes a semiconductor oxide layer interposed between the fin feature and the stack of the semiconductor layers. A surface of the semiconductor oxide layer contacts the fin feature and an opposite surface of the semiconductor oxide layer contacts a bottom layer of the stack of semiconductor layers. The device also includes a conductive material layer encircling each of the semiconductor layers and filling in spaces between each of two semiconductor layers.
Claims20
A semiconductor device comprising:
- a first fin feature over a substrate;
- a second fin feature over the substrate extending parallel to the first fin feature;
- a first stack of semiconductor layers over the first fin feature, wherein each layer of the first stack of semiconductor layers does not contact a remainder of the first stack of semiconductor layers, wherein the first stack of semiconductor layers includes a first semiconductor layer and a second semiconductor layer;
- a second stack of semiconductor layers over the second fin feature, wherein each layer of the second stack of semiconductor layers does not contact a remainder of the second stack of semiconductor layers;
- a semiconductor oxide layer interposed between the first fin feature and the first stack of semiconductor layers, wherein a surface of the semiconductor oxide layer physically contacts the first fin feature and an opposite surface of the semiconductor oxide layer physically contacts a bottom layer of the first stack of semiconductor layers;
- and
- a conductive material layer surrounding each semiconductor layer of the first and second stacks of semiconductor layers and filling in spaces between the semiconductor layers, the conductive material layer having the same material composition extending from the first semiconductor layer to the second semiconductor layer such that the conductive material layer physically contacts the first and second semiconductor layers, wherein a region of the conductive material layer between topmost layers of the first and second stacks of semiconductor layers includes:
- a first portion of substantially uniform width;
- a second portion disposed on the first portion having a width that decreases in a direction away from the substrate;
- and
- a third portion disposed on the second portion having a width that increases in the direction away from the substrate.
8 more elements
A semiconductor device comprising:
- a fin feature over a substrate;
- a source and drain (S/D) feature over the fin feature, the S/D feature including:
- a stack of semiconductor layers, wherein each of the semiconductor layers does not contact each other, wherein the stack of semiconductor layer includes a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer includes:
- a lower portion having side surfaces that are substantially vertical;
- a middle portion having side surfaces that taper outwards from the side surfaces of the lower portion;
- and
- an upper portion having side surfaces that taper inwards from the side surfaces of the middle portion;
- a semiconductor oxide layer interposed between the fin feature and the S/D feature, wherein a surface of the semiconductor oxide layer contacts the fin feature and an opposite surface of the semiconductor oxide layer contacts a bottom layer of the stack of semiconductor layers;
- and
- a metal layer encircling each of the semiconductor layers of the S/D feature and filling in spaces between each of two semiconductor layers, the metal layer having the same material composition extending from the first semiconductor layer to the second semiconductor layer such that the metal layer physically contacts the first and second semiconductor layers.
7 more elements
A semiconductor device comprising:
- a substrate;
- a fin feature formed on the substrate;
- semiconductor layers stacked on the fin feature, wherein:
- the semiconductor layers are separated from each other by a conductive material layer;
- the semiconductor layers includes a first semiconductor layer and a second semiconductor layer;
- the conductive material layer has the same material composition extending from the first semiconductor layer to the second semiconductor layer such that the conductive material layer physically contacts the first and second semiconductor layers;
- the first semiconductor layer has a first cross-sectional shape profile that includes:
- a first portion having substantially uniform width;
- a second portion disposed on the first portion and tapering outward in a direction away from the substrate;
- and
- a third portion disposed on the second portion and tapering inward in the direction away from the substrate;
- and
- the second semiconductor layer has a second cross-sectional shape profile that is different than the first cross-sectional shape profile;
- and
- a semiconductor oxide layer interposed between the fin feature and the semiconductor layers, wherein a surface of the semiconductor oxide layer contacts the fin feature and an opposite surface of the semiconductor oxide layer contacts a bottom layer of the semiconductor layers.
12 more elements
Dependencies are inferred from the claim text.