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US 10,196,755 B2Granted
Concentric flower reactor
AssigneeSol Voltaics AB
InventorsGreg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
Life of this patent
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Abstract
A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.
Claims21
A method of fabricating semiconductor nanowires comprising:
- providing a first gas stream to a first reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires;
- providing a second gas stream to the first reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the first reaction chamber;
- providing nanowire growth catalyst particles;
- adding a first dopant gas having a first conductivity type to the first gas stream to grow semiconductor nanowires of the first conductivity type in a gas phase in the first reaction chamber;
- and
- adding a second dopant gas having a second conductivity type after the step of adding the first dopant gas to form a p-n or p-i-n junction in the semiconductor nanowires;
- wherein the semiconductor nanowires comprise single crystal Group III-V or Group II-VI semiconductor nanowires.
4 more elements
A method of fabricating semiconductor nanowires comprising:
- providing a first gas stream to a first reaction chamber, wherein the first gas stream comprises a core flow stream containing a first precursor for fabricating the semiconductor nanowires;
- providing a second gas stream to the first reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the first reaction chamber;
- providing nanowire growth catalyst particles;
- adding a first dopant gas having a first conductivity type to the first gas stream to grow semiconductor nanowires of the first conductivity type in a gas phase in the first reaction chamber;
- removing the second gas stream from the first reaction chamber before it reaches a second reaction chamber;
- providing the semiconductor nanowires from the first reaction chamber to the second reaction chamber;
- providing a third gas stream to the second reaction chamber, wherein the third gas stream comprises a second precursor for fabricating the semiconductor nanowires;
- providing a fourth gas stream to the second reaction chamber, wherein the fourth gas stream forms a sheath separating the third gas stream from a wall of the second reaction chamber;
- and
- adding a second dopant gas having a second conductivity type into the second reaction chamber after the step of adding the first dopant gas to grow a p-n or p-i-n junction in the semiconductor nanowires in a gas phase in the second reaction chamber;
- wherein the semiconductor nanowires comprise single crystal Group III-V or Group II-VI semiconductor nanowires.
8 more elements
A method of fabricating semiconductor nanowires comprising:
- providing nanowire growth catalyst particles to a reaction chamber;
- providing a first gas stream to the reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires to grow semiconductor nanowires in a gas phase in the reaction chamber;
- providing a second gas stream to the reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the reaction chamber;
- adding a first dopant gas having a first conductivity type do dope the semiconductor nanowires with a dopant of the first conductivity type;
- and
- adding a second dopant gas having a second conductivity type after the step of adding the first dopant gas to form a p-n or p-i-n junction in the semiconductor nanowires;
- wherein the semiconductor nanowires comprise single crystal Group III-V or Group II-VI semiconductor nanowires.
4 more elements
Dependencies are inferred from the claim text.