Capacitively coupled level shifter

An electronic component, comprising:

• a package base;
• and
• at least one GaN-based die secured to the package base and including an electronic circuit comprising:
• a low side power switch configured to be selectively conductive according to one or more input signals;
• a high side power switch configured to be selectively conductive according to the one or more input signals;
• a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals;
• an inverting or noninverting logic gate having an input threshold based on the voltage of a power node, where the voltage of the power node has a voltage which changes according to the input signals, wherein a power terminal of the logic gate is connected to the power node;
• and
• a voltage generator configured to generate a power voltage at a VMID node, wherein the power voltage is based on the voltage of the power node, wherein a ground terminal of the logic gate is connected to the VMID node, and wherein the input threshold voltage of the logic gate is between the voltage of the power node and the power voltage at the VMID node.