Wafer transfer device
AssigneeSK Siltron Co., Ltd.
InventorSo Mi Kim
Life of this patent
Estimating the term…
Abstract
An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.
Claims12
A wafer transfer device comprising:
- a guide configured to move in a vertical direction or in a horizontal direction;
- a moving arm provided on the guide and supporting edge portions of wafers, which are spaced apart from each other such that front surfaces or rear surfaces of the wafers are parallel to the vertical direction;
- a laser emission unit disposed on the guide and configured to emit a first laser to the wafers, which are seated on the moving arm and are spaced apart from each other;
- and
- a laser detection unit disposed under the moving arm and configured to collect a second laser that is a portion of the first laser and has passed through a gap between the wafers, which are spaced apart from each other,
- wherein the first laser has an emission area in the horizontal direction,
- wherein a first end of the emission area is aligned with one end of a first wafer among the wafers, and a second end of the emission area is aligned with one end of a last wafer among the wafers,
- wherein the one end of the first wafer is a surface of the first wafer opposite to another surface of the first wafer facing a second wafer among the wafers, and
- wherein the one end of the last wafer is a surface of the last wafer opposite to another surface of the last wafer facing a wafer immediately before the last wafer.
A wafer-processing method of processing wafers mounted on a wafer transfer device including a laser emission unit configured to emit a laser and a laser detection unit configured to detect the laser, the method comprising:
- emitting a first laser having an emission area in a horizontal direction to the wafers mounted on the wafer transfer device by the laser emission unit;
- detecting a second laser that has passed between the wafers mounted on the wafer transfer device by the laser detection unit;
- measuring a thickness of the wafers mounted on the wafer transfer device based on the detected result;
- and
- processing the wafers mounted on the wafer transfer device based on the measured thickness,
- wherein the wafers mounted on the wafer transfer device are spaced apart from each other such that front surfaces or rear surfaces of the wafers are parallel to a vertical direction,
- wherein a first end of the emission area is aligned with one end of a first wafer among the wafers mounted on the wafer transfer device, and a second end of the emission area is aligned with one end of a last wafer among the wafers mounted on the wafer transfer device
- wherein the one end of the first wafer is a surface of the first wafer opposite to another surface of the first wafer facing a second wafer among the wafers mounted on the wafer transfer device, and
- wherein the one end of the last wafer is a surface of the last wafer opposite to another surface of the last wafer facing a wafer immediately before the last wafer.
Dependencies are inferred from the claim text.