Methodology for chamber performance matching for semiconductor equipment

A non-transitory computer-readable storage medium storing a program, which, when executed by a processor performs an operation for operating a processing chamber, the operation comprising:

• performing a first hardware calibration process by calibrating sensors in a plasma processing chamber based on sensor responses collected and analyzed from operating a first predetermined process in the plasma processing chamber;
• performing a second hardware calibration process by calibrating the sensors in the processing chamber based on sensor responses collected and analyzed from operating a first set of processes including at least two processes in the processing chamber,
• wherein the first set of processes comprises multiple processes including the process parameters set in the first predetermined process, 20% above and below of the process parameters set in the first predetermined process, and 10% above and below of the process parameters set in the first predetermined process;
• and
• maintaining a desired gas pressure in the plasma processing chamber while performing the first and the second hardware calibration processes.

A processing system, comprising:

• a controller coupled to a plasma processing chamber, the controller comprising a system memory containing instructions and a processor, the processor configured to cause the plasma processing chamber to perform a method when executing the instructions, the method comprising:
• receiving a first set of signals transmitted from a plasma processing chamber when performing a first predetermined process in the plasma processing chamber;
• analyzing the collected first set of signals;
• comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors;
• calibrating sensors based on the collected first set of signals when a mismatch sensor response is found;
• subsequently performing a first series of processes including at least two processes in the processing chamber, wherein the first set of processes samples run at process parameters set by the first predetermined process, set about 20% above and below of the process parameters set by the first predetermined process, and set about 10% above and below of the process parameters set in the first predetermined process;
• maintaining a desired gas pressure in the plasma processing chamber while performing the first series of processes;
• and
• collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.