Semiconductor optical device, optical module, and method for manufacturing semiconductor optical device

A semiconductor optical device comprising:

• a first conductive type semiconductor layer;
• an active layer provided on at least a part of the first conductive type semiconductor layer, and comprising a light emitting layer;
• a second conductive type semiconductor layer comprising a ridge portion provided on the first conductive type semiconductor layer and the active layer and formed in a stripe shape;
• a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer;
• an optical functioning part comprising at least the first conductive type semiconductor layer and the second conductive type semiconductor layer, and configured to convert a state of light emitted from the light emitting layer, and the optical functioning part has a height higher than a height of a bottom surface of the ridge portion;
• and
• a pair of second grooves respectively formed in connection, at the optical functioning part side of the first grooves, with an outer part of an end portion of a corresponding one of the first grooves and apart from an inner part of the end portion of the corresponding one of the first grooves.

A method for manufacturing semiconductor optical device, the method comprising:

• forming a first conductive type semiconductor layer;
• forming an active layer including a light emitting layer on at least a part of the first conductive type semiconductor layer;
• forming a second conductive type semiconductor layer including a ridge portion formed in a stripe shape on the first conductive type semiconductor layer and the active layer;
• forming a pair of first grooves dividing the active layer on bottom surfaces of both sides of the ridge portion;
• forming an optical functioning part comprising at least the first conductive type semiconductor layer and the second conductive type semiconductor layer, and configured to convert a state of light emitted from the light emitting layer, and the optical functioning part has a height higher than a height of the bottom surfaces of the ridge portion;
• and
• forming a pair of second grooves in respective connection with an outer side of a corresponding one of the first grooves and in a state of being separated from both end portions of the pair of first grooves, and at least a part of each of the second grooves is formed on the optical functioning part,
• wherein the second conductive type semiconductor layer is divided by the second grooves, and a maximum height of an inner wall surface of each of the second grooves is higher than a maximum height of an inner wall surface of the corresponding one of the first grooves.