Nanowire-based superconducting electrostrictive device

A method for selectively establishing a Josephson junction, comprising the steps of:

• A) forming an untwinned YBa2Cu3Ox film having an a-axis and a b-axis;
• B) establishing a nanowire in said YBa2Cu3Ox film;
• C) placing a first gate structure and a second gate structure across from each other, on either side of said nanowire, to establish a first microgap and a second microgap;
• and,
• D) selectively establishing an electric field across said first microgap and said second microgap, said electric field being co-linear with said a-axis.

A device, comprising:

• a first gate structure;
• a second gate structure spaced apart from said first gate structure to establish an interstice there between;
• a gate voltage, said gate voltage establishing an electric field across said interstice;
• and,
• a nanowire inserted into said interstice to form a first microgap having a first microgap width and a second microgap having a second microgap width, said nanowire having a long dimension and a nanowire thickness, said nanowire thickness, said first microgap width and said second microgap width being approximately equal, said nanowire being formed from an untwinned YBa2Cu3Ox film having a crystallographic a-axis and a crystallographic b-axis that are orthogonal, said long dimension being parallel with said crystallographic b-axis.