Method for manufacturing fully aligned via structures having relaxed gapfills
AssigneeGlobalfoundries Inc.
InventorsNicholas V. LiCausi, Errol Todd Ryan
Life of this patent
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to fully aligned via structures having relaxed gapfills and methods of manufacture. The method includes: selectively depositing a capping material on a conductive material within a plurality of interconnect structures to form capped interconnect structures; depositing at least one insulator material over the capped interconnect structures; forming a fully aligned via structure through the at least one insulator material to expose the capping material; filling the fully aligned via structure with an alternative metal; and depositing a metal material on the alternative metal in the fully aligned via structure.
Claims20
A method, comprising:
- selectively depositing a capping material on a conductive material within a plurality of interconnect structures to form capped interconnect structures;
- depositing at least one insulator material over the capped interconnect structures;
- forming a fully aligned via structure through the at least one insulator material to expose the capping material;
- filling the fully aligned via structure with an alternative metal;
- and
- depositing a metal material on the alternative metal in the fully aligned via structure, wherein the at least one insulator material is a liner material over the metal material and an interlevel dielectric layer.
A method, comprising:
- forming a plurality of interconnect structures;
- recessing the interconnect structures;
- selectively depositing conductive capping material in the recesses in direct contact with metal material of the interconnect structures;
- forming a conformal dielectric layer over the conductive capping material;
- forming a gapfill layer over the conformal dielectric layer;
- forming a fully aligned via structure through the gapfill layer and the dielectric layer, exposing the conductive capping material;
- filling the fully aligned via structure with an alternative metal in direct electrical contact with the conductive capping material;
- and
- depositing a metal fill material in an upper interconnect layer in direct electrical contact with the alternative metal in the fully aligned via structure.
Dependencies are inferred from the claim text.