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US 10,167,570 B2Granted
N-type SiC single crystal and method for its production
AssigneeToyota Jidosha Kabushiki Kaisha
InventorTakayuki Shirai
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Abstract
A n-type SiC single crystal with low resistivity and low threading dislocation density is provided, which is achieved by a n-type SiC single crystal containing germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [Ge/N] satisfies the relationship 0.17<[Ge/N]<1.60.
Claims8
A n-type SiC single crystal, which is grown on a SiC seed crystal substrate, the n-type SiC single crystal comprising germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [Ge/N] satisfies the relationship 0.24≤[Ge/N]≤0.83,
- the nitrogen density [N] satisfies the relationship 1.00×1019/cm3≤[N]≤1.00×1020/cm3,
- the germanium density [Ge] satisfies the relationship 1.70×1018/cm3<[Ge]<1.60×1020/cm3, and the n-type SiC single crystal has a resistivity of 10 mΩ·cm or lower, and the same threading dislocation density level as the seed crystal substrate.
Dependencies are inferred from the claim text.