Semiconductor device

A semiconductor device, comprising:

• a wiring substrate having a main surface, a rear surface opposite the main surface, and a plurality of external electrodes formed on the rear surface;
• an interposer mounted over the main surface of the wiring substrate and having an upper surface and a lower surface opposite the upper surface;
• and
• first and second semiconductor chips mounted on the upper surface of the interposer such that the first semiconductor chip and the second semiconductor chip are arranged side by side in plan view,
• wherein the interposer has:
• a plurality of wiring layers disposed between the upper and lower surfaces;
• a plurality of land electrodes each formed of the wiring layers;
• a plurality of wires each formed of the wiring layers and electrically coupled individually to the land electrodes;
• and
• a plurality of through electrodes electrically coupling the wiring layers to each other,
• wherein the wiring layers include a first wiring layer, a second wiring layer disposed closer to the lower surface than the first wiring layer, a third wiring layer disposed closer to the lower surface than the first wiring layer, and a fourth wiring layer disposed between the first and second wiring layers and between the first and third wiring layers,
• wherein the land electrodes include first and second land electrodes each formed of the first wiring layer, a third land electrode formed of the second wiring layer, and a fourth land electrode formed of the third wiring layer,
• wherein the through electrodes include a first through electrode extending through the fourth wiring layer and having one end coupled to the first land electrode and the other end coupled to the third land electrode and a second through electrode extending through the fourth wiring layer and having one end coupled to the second land electrode and the other end coupled to the fourth land electrode,
• wherein some of the wires formed of the fourth wiring layer are placed between the first and second through electrodes,
• wherein the first land electrode overlaps the third land electrode in plan view,
• wherein the first through electrode is arranged between the first and third land electrodes in a cross-section view,
• wherein the second land electrode overlaps the fourth land electrode in plan view,
• wherein the second through electrode is arranged between the second and fourth land electrodes in cross-section view, and
• wherein, in cross-section view, a length between the first and second through electrodes in the fourth wiring layer is greater than a length between the first and second land electrodes in the first wiring layer in a direction from the first through electrode to the second through electrode.