Semiconductor structure

A semiconductor structure comprising:

• a first pair of differential signal lines extending in a first direction, wherein each differential signal line of the first pair of differential lines comprises a first segment and a second segment, the first segment is in a first conductive layer, the second segment is in a second conductive layer different from the first conductive layer, and the first segment is electrically connected to the second segment for each corresponding differential signal line of the first pair of differential signal lines;
• and
• a second pair of differential signal lines extending in the first direction, wherein at least one differential signal line of the second pair of differential signal lines is between adjacent differential signal lines of the first pair of differential signal lines in a second direction perpendicular to the first direction, each differential signal line of the second pair of differential lines comprises a third segment and a fourth segment, the third segment is in the second conductive layer, the fourth segment is in the first conductive layer, and the third segment is electrically connected to the fourth segment for each corresponding differential signal line of the second pair of differential signal lines,
• wherein an area of the first conductive layer between first segments of the first pair of differential signal lines is free of the fourth segment of each differential signal line of the second pair of differential signal lines.

A semiconductor structure comprising:

• a first conductive path extending in a first direction, wherein the first conductive path comprises a first segment and a second segment, the first segment is in a first conductive layer, the second segment is in a second conductive layer different from the first conductive layer, and the first segment is electrically connected to the second segment;
• a second conductive path extending in the first direction, wherein the second conductive path comprises a third segment and a fourth segment, the third segment is in the first conductive layer, the fourth segment is in the second conductive layer, and the third segment is electrically connected to the fourth segment;
• and
• a third conductive path extending in the first direction, wherein the third conductive path is between the first conductive path and the second conductive path in a second direction perpendicular to the first direction, the third conductive path comprises a fifth segment and a sixth segment, the fifth segment is in the second conductive layer, the sixth segment is in the first conductive layer, and the fifth segment is electrically connected to the sixth segment,
• wherein a first area of the first conductive layer extending in the second direction is free of the first segment, and the first area of the first conductive layer contains the third segment and the sixth segment.