Ferroelectric memory cell recovery
AssigneeMicron Technology, Inc.
InventorsMarcello Mariani, Giorgio Servalli, Andrea Locatelli
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Abstract
Methods, systems, and devices for recovering fatigued ferroelectric memory cells are described. Recovery voltages may be applied to a ferroelectric memory cell that is fatigued due to repeated access (read or write) operations. The recovery voltage may have a greater amplitude than the access voltage and may include multiple voltage pulses or a constant voltage. The recovery operation may be performed in the background as the memory array operates, or it may be performed when a host device is not actively using the memory array. The recovery operations may be performed periodically or may include discrete series of pulses distributed among several instances.
Claims20
A method, comprising:
- determining that a parameter of a memory cell of a memory array has satisfied a fatigue threshold;
- and
- applying a recovery voltage to the memory cell based at least in part on determining that the parameter of the memory cell has satisfied the fatigue threshold.
A circuit, comprising:
- a memory array including a plurality of memory cells;
- and
- a memory controller operable to:
- initiate a fatigue recovery operation for a memory cell of the plurality of memory cells;
- determine that a parameter of the memory cell has satisfied a fatigue threshold;
- and
- apply a recovery voltage to the memory cell of the plurality of memory cells based at least in part on the determination that the parameter has satisfied the fatigue threshold.
A method, comprising:
- determining that a memory cell has satisfied a fatigue threshold based at least in part on a number of access operations that have been performed on the memory cell;
- and
- applying a recovery voltage to the memory cell based at least in part on determining that the memory cell has satisfied the fatigue threshold.
Dependencies are inferred from the claim text.