Organic thin film transistor and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsSeung Hun Kim, Hyo Jeong Kwon, Il Hwa Hong, Seung Yong Song, Sang Hwan Cho
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Abstract
An organic thin film transistor and a method of manufacturing the same, the transistor including a gate electrode; an organic semiconductor layer overlapping the gate electrode; and an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region, wherein the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer, and the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space.
Claims18
An organic thin film transistor, comprising:
- a gate electrode;
- an organic semiconductor layer overlapping the gate electrode;
- and
- an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region,
- wherein:
- the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer,
- the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space, and
- the inorganic material includes a group in which aluminum and oxygen are alternately chemical-bonded, a group in which zirconium and oxygen are alternately chemical-bonded, a group in which hafnium and oxygen are alternately chemical-bonded, or a group in which titanium and oxygen are alternately chemical-bonded.
A method for manufacturing an organic thin film transistor, the method comprising:
- forming a gate electrode on a substrate;
- forming an organic insulating layer on the gate electrode;
- forming an organic semiconductor layer on the organic insulating layer;
- exposing the organic semiconductor layer and the organic insulating layer to a precursor gas atmosphere;
- exposing the organic semiconductor layer and the organic insulating layer to a reactant gas atmosphere;
- and
- forming an organic/inorganic hybrid region in the organic insulating layer.
Dependencies are inferred from the claim text.