Curable polymeric materials and their use for fabricating electronic devices

An electronic device comprising a transistor component having a semiconductor layer comprising a semiconducting electronic material, a dielectric layer comprising an insulating electronic material, and source, drain, and gate electrodes each comprising a conducting electronic material, wherein the transistor component comprises:

• an organic material comprising a linear polymer having a repeating unit of formula (A):
• wherein:
• X and Y independently are selected from the group consisting of CH2, CHR, CR2, C(O), SiH2, SiHR, SiR2, NH, NR, O, and S, wherein
• R is selected from the group consisting of a halogen, —ORa, —C(O)ORa, —OC(O)Ra, —NRbRc, —C(O)NRbRc, —OC(O)NRbRc, a C1-10 alkyl group, a C1-10 haloalkyl group, and an optionally substituted aryl or heteroaryl group,
• Ra is a C1-10 alkyl group or a —Si(C1-10 alkyl)3 group, and
• Rb and Rc independently are H or a C1-10 alkyl group;
• W—Z is CH═CH or
• R1, R2, R3, and R4 independently are selected from the group consisting of H, —ORd, —C(O)ORd, —OC(O)ORd, a C1-10 alkyl group, a C1-10 haloalkyl group, and L-Q, wherein
• L is selected from the group consisting of —O—, —C(O), a divalent C1-10 alkyl group, a divalent C6-18 aryl group, a covalent bond, and combinations thereof,
• Q is a crosslinkable group comprising, a —CH═CH2 moiety, a —CH═CH—CH3 moiety, a —CH═C(CH3)2 moiety, a —C(CH3)═CH2 moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, an epoxy moiety, or a combination thereof, and
• Rd is H or a C1-10 alkyl group,
• provided that at least one of R1, R2, R3, and R4 is L-Q;
• and
• m is 0, 1 or 2;
• wherein either the dielectric layer comprises the organic material as the insulating electronic material or the organic material is in contact with at least one of the semiconducting electronic material, the insulating electronic material, and the conducting electronic material.