3D IC method and device
AssigneeInvensas Bonding Technologies, Inc.
InventorsPaul M. Enquist, Gaius Gillman Fountain, Jr., Qin-Yi Tong
Life of this patent
Estimating the term…
Abstract
A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.
Claims24
A bonded structure comprising:
- a first contact structure disposed on a first substrate, the first contact structure comprising a metal selected from copper, tungsten, nickel, gold or alloys thereof;
- a first non-metallic region located on a first surface of the first substrate proximate to the first contact structure;
- a second contact structure disposed on a second substrate and bonded to the first contact structure, the second contact structure comprising a metal selected from copper, tungsten, nickel, gold or alloys thereof;
- and
- a second non-metallic region located on a second surface of the second substrate proximate to the second contact structure,
- wherein the first non-metallic region contacts and is directly bonded to the second non-metallic region along an interface with a bonding strength greater than 1 J/m2, the interface extending substantially to the bonded first and second contact structures.
A bonded structure comprising:
- a first contact structure disposed on a first substrate;
- a first non-metallic region located on a first surface of the first substrate proximate to the first contact structure;
- a second contact structure disposed on a second substrate;
- and
- a second non-metallic region located on a second surface of the second substrate proximate to the second contact structure,
- wherein the first non-metallic region contacts and is directly bonded to the second non-metallic region along an interface with a bonding strength greater than 1 J/m2, wherein the first contact structure contacts and is directly bonded to the second contact structure without melting or reflowing, the interface extending substantially to the bonded first and second contact structures.
Dependencies are inferred from the claim text.